Microelectronics, Volume. 52, Issue 6, 927(2022)

Design of a High Gain and Broadband Doherty PA Based on GaAs HBT Process

WU Haoyan1,2, LI Zhiqiang1,2, and WANG Xiantai2,3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(6)

    [3] [3] YAO J S, SUN X P, LIN B. 1.5-2.7 GHz ultra low noise bypass LNA [C]// IMS2014. Tampa, FL, USA. 2014: 1-3.

    [4] [4] SHARMA-NITESH R, RAJENDRAN J, RAMIAH H, et al. A 700 MHz to 2.5 GHz cascode GaAs power amplifier for multi-band pico-cell achieving 20 dB gain, 40 dBm to 45 dBm OIP3 and 66% peak PAE [J]. IEEE Access, 2018, 6: 818-829.

    [5] [5] LV G, CHEN W, LIU X, et al. A dual-band GaN MMIC power amplifier with hybrid operating modes for 5G application [J]. IEEE Microw Wirel Compon Lett, 2019, 29(3): 228-230.

    [7] [7] GRAMS V, SEIDEL A, STARKE P, et al. Analysis and design of an asymmetric Doherty power amplifier at 2.6 GHz using GaAs pHEMTs [C]// COMCAS. Tel-Aviv, Israel. 2019: 1-3.

    [8] [8] SUGIURA T, FURUTA S, MURAKAMI T, et al. High efficiency compact Doherty power amplifier with novel harmonics termination for handset applications [C]// APMC. Kyoto, Japan. 2018: 455-457.

    [9] [9] LV G, CHEN W, FENG Z. A C-band GaAs Doherty power amplifier MMIC with compact size and 1-GHz bandwidth [C]// IMWS-5G. Dublin, Ireland. 2018: 1-3.

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    WU Haoyan, LI Zhiqiang, WANG Xiantai. Design of a High Gain and Broadband Doherty PA Based on GaAs HBT Process[J]. Microelectronics, 2022, 52(6): 927

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    Paper Information

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    Received: Nov. 10, 2021

    Accepted: --

    Published Online: Mar. 11, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210432

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