Infrared and Laser Engineering, Volume. 45, Issue 7, 720004(2016)

70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

Zhang Lisen*... Xing Dong, Xu Peng, Liang Shixiong, Wang Junlong, Wang Yuangang, Yang Dabao and Feng Zhihong |Show fewer author(s)
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    Zhang Lisen, Xing Dong, Xu Peng, Liang Shixiong, Wang Junlong, Wang Yuangang, Yang Dabao, Feng Zhihong. 70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz[J]. Infrared and Laser Engineering, 2016, 45(7): 720004

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    Paper Information

    Category: 光电器件与微系统

    Received: Feb. 5, 2016

    Accepted: Mar. 7, 2016

    Published Online: Aug. 18, 2016

    The Author Email: Lisen Zhang (zhls1209@163.com)

    DOI:10.3788/irla201645.0720004

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