Acta Optica Sinica, Volume. 40, Issue 15, 1526002(2020)

Realization of 655 nm Micro-RCLED Working at Low Driving Current for Micro-Displays

Jianjun Li*, Hongkang Cao, Jun Deng, Zhenyu Wen, Deshu Zou, Xiaoqian Zhou, and Qiwei Yang
Author Affiliations
  • Key Laboratory of Opto-Electronic Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
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    Figures & Tables(6)
    Structure diagram of the Micro-RCLED
    Top view micrograph of Micro-RCLED. (a) After AlAs lateral oxidation; (b) after removing P-electrode; (c) enlargement of Fig. (b)
    V-I and IdV/dI-I curves for units Micro-RCLED
    Brightness of the Micro-RCLED at different working currents
    Optical power and external quantum efficiency as function of the Micro-RCLED driving current
    Room temperature electroluminescence spectrum of the Micro-RCLED at different currents
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    Jianjun Li, Hongkang Cao, Jun Deng, Zhenyu Wen, Deshu Zou, Xiaoqian Zhou, Qiwei Yang. Realization of 655 nm Micro-RCLED Working at Low Driving Current for Micro-Displays[J]. Acta Optica Sinica, 2020, 40(15): 1526002

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    Paper Information

    Category: Physical Optics

    Received: Apr. 2, 2020

    Accepted: May. 6, 2020

    Published Online: Aug. 14, 2020

    The Author Email: Li Jianjun (lijianjun@bjut.edu.cn)

    DOI:10.3788/AOS202040.1526002

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