Chinese Optics Letters, Volume. 13, Issue Suppl., S21602(2015)

Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers

Huibo Yuan, Lin Li*, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, and Guojun Liu
Author Affiliations
  • National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
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    References(15)

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    Huibo Yuan, Lin Li, Te Li, Jing Zhang, Yong Wang, Zhongliang Qiao, Zhanguo Li, Yi Qu, Xiaohui Ma, Guojun Liu. Photoluminescence of a high strain InGaAs single quantum well with GaAsP barriers[J]. Chinese Optics Letters, 2015, 13(Suppl.): S21602

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    Paper Information

    Category: Materials

    Received: Jan. 11, 2015

    Accepted: Mar. 10, 2015

    Published Online: Aug. 8, 2018

    The Author Email: Lin Li (licust@126.com)

    DOI:10.3788/COL201513.S21602

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