Researching | Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Chinese Optics Letters, Volume. 16, Issue 6, 060401(2018)

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü^*, Hongyu Guo, Guodong Gu, and Zhihong Feng^**

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National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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Cited By

[1] Xiaolong Cai, Dong Zhou, Liang Cheng, Fangfang Ren, Hong Zhong, Rong Zhang, Youdou Zheng, Hai Lu. Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses. Chinese Physics B, 28, 098503(2019).

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Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401

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Paper Information

Category: Detectors

Received: Mar. 8, 2018

Accepted: Apr. 16, 2018

Published Online: Jul. 2, 2018

The Author Email: Yuanjie Lü (yuanjielv@163.com), Zhihong Feng (ga917vv@163.com)

DOI:10.3788/COL201816.060401

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology