High Power Laser and Particle Beams, Volume. 32, Issue 4, 044001(2020)
Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices
Fig. 2. Curves of current gain
Fig. 3. Curves of current gain
Fig. 4. Diagram of electron flow and hole flow when NPN transistor is working in positive active region
Fig. 5. Curves of base current
Fig. 6. Schematic diagram of irradiation effect of neutron first followed by γ incidence (taking PNP bipolar transistor as an example)
Fig. 7. Schematic diagram of irradiation effect of γ first followed by neutron incidence ( taking PNP bipolar transistor as an example)
Get Citation
Copy Citation Text
Kai Wang, Xueyang Lü, Kunlin Wu, Jiaming Feng, Xiaoqiang Fan, Junjie Li, Guixia Yang, Yi Lu, Dong Qiu, Dehui Zou. Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices[J]. High Power Laser and Particle Beams, 2020, 32(4): 044001
Category:
Received: Sep. 4, 2019
Accepted: --
Published Online: Mar. 30, 2020
The Author Email: Zou Dehui (32859603@qq.com)