High Power Laser and Particle Beams, Volume. 32, Issue 4, 044001(2020)

Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices

Kai Wang... Xueyang Lü, Kunlin Wu, Jiaming Feng, Xiaoqiang Fan, Junjie Li, Guixia Yang, Yi Lu, Dong Qiu and Dehui Zou* |Show fewer author(s)
Author Affiliations
  • Institute of Nuclear Physics and Chemistry, CAEP, Mianyang 621900, China
  • show less
    Figures & Tables(7)
    Experimental flow chart
    Curves of current gain hFEvs collector current IC of A-NPN BJTs
    Curves of current gain hFEvs collector current IC of B-PNP BJTs
    Diagram of electron flow and hole flow when NPN transistor is working in positive active region
    Curves of base current IB vs. collector current IC of A-NPN BJTs and B-PNP BJTs
    Schematic diagram of irradiation effect of neutron first followed by γ incidence (taking PNP bipolar transistor as an example)
    Schematic diagram of irradiation effect of γ first followed by neutron incidence ( taking PNP bipolar transistor as an example)
    Tools

    Get Citation

    Copy Citation Text

    Kai Wang, Xueyang Lü, Kunlin Wu, Jiaming Feng, Xiaoqiang Fan, Junjie Li, Guixia Yang, Yi Lu, Dong Qiu, Dehui Zou. Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices[J]. High Power Laser and Particle Beams, 2020, 32(4): 044001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Sep. 4, 2019

    Accepted: --

    Published Online: Mar. 30, 2020

    The Author Email: Zou Dehui (32859603@qq.com)

    DOI:10.11884/HPLPB202032.190333

    Topics