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Journal of Inorganic Materials, Volume. 34, Issue 3, 321(2019)

Preparation and Thermoelectric Property of n-type SnS

Zhi-Cheng HUANG1,2, Yao YAO1, Jun PEI1,2, Jin-Feng DONG2, Bo-Ping ZHANG1, Jing-Feng LI2, Peng-Peng SHANG3, [in Chinese]1,2, [in Chinese]1, [in Chinese]1,2, [in Chinese]2, [in Chinese]1, [in Chinese]2, and [in Chinese]3
Author Affiliations
  • 11. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • 22. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • 33. College of Chemistry and Material Science, Shandong Agricultural University, Tai'an 271018, China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(7)
    XRD patterns of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction
    . XRD patterns of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction

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    Lattice parameters (dots) and cell volume (histogram) of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)
    . Lattice parameters (dots) and cell volume (histogram) of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)

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    (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x=0.03 sample
    . (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x=0.03 sample

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    SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-xClx bulk samples
    . SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-xClx bulk samples

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    Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06)
    . Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06)

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    Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05 0.06)
    . Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05 0.06)

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    • Table 1. Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS1-xClx

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      Table 1. Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS1-xClx

      xNominal comp.Real comp.RH/(cm3•C-1)nH/cm-3μH/(cm2•V-1•s-1)
      0SnSSnS0.971.55×1034.03×10151.29
      0.02SnS0.98Cl0.02SnS0.95Cl1.43×1054.35×10132.83
      0.03SnS0.97Cl0.03SnS0.97Cl0.005-9.9×1036.31×10142.34
      0.04SnS0.96Cl0.04SnS0.95Cl0.009-7.19×1038.68×10143.04
      0.05SnS0.95Cl0.05SnS0.93Cl0.021-9.22×1026.78×10153.18
      0.06SnS0.94Cl0.06SnS0.92Cl0.022-8.6×1027.27×10153.60
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    Zhi-Cheng HUANG, Yao YAO, Jun PEI, Jin-Feng DONG, Bo-Ping ZHANG, Jing-Feng LI, Peng-Peng SHANG, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Thermoelectric Property of n-type SnS[J]. Journal of Inorganic Materials, 2019, 34(3): 321

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    Paper Information

    Category: Research Articles

    Received: Jun. 29, 2018

    Accepted: --

    Published Online: Sep. 26, 2021

    The Author Email:

    DOI:10.15541/jim20180293

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology