Acta Photonica Sinica, Volume. 49, Issue 11, 116(2020)
InP Based Long Wavelength Transistor Lasers (Invited)
Fig. 1. Schematic structure and direct modulation response of a GaAs based TL
Fig. 2. Tunnel junction TL band and light power as a function of
Fig. 3. Laser integrated with transistor by conventional and TL ways[11]
Fig. 4. Schematic structure and material structure of InP based shallow ridge TL[15]
Fig. 5. Light power as a function of base current of InP based shallow ridge TL[15]
Fig. 6. Schematic structure and common emitter mode opto-electronic properties of InP based buried ridge TL[18]
Fig. 7. Schematic structure of deep ridge TL and SEM cross-section picture of an InP deep ridge TL[21]
Fig. 8. Material structure of the room temperature deep ridge InP TL[24]
Fig. 9. Common emitter mode opto-electronic properties an InP deep ridge TL[24]
Fig. 10. Common emitter mode light power and current gain of TLs having doping level from 0 to 1×1018cm-3 in the MQWs
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Song LIANG. InP Based Long Wavelength Transistor Lasers (Invited)[J]. Acta Photonica Sinica, 2020, 49(11): 116
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Published Online: Mar. 11, 2021
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