Acta Photonica Sinica, Volume. 49, Issue 11, 116(2020)

InP Based Long Wavelength Transistor Lasers (Invited)

Song LIANG1,2,3
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China
  • 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing10008, China
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    Figures & Tables(11)
    Schematic structure and direct modulation response of a GaAs based TL
    Tunnel junction TL band and light power as a function of VCE[9]
    Laser integrated with transistor by conventional and TL ways[11]
    Schematic structure and material structure of InP based shallow ridge TL[15]
    Light power as a function of base current of InP based shallow ridge TL[15]
    Schematic structure and common emitter mode opto-electronic properties of InP based buried ridge TL[18]
    Schematic structure of deep ridge TL and SEM cross-section picture of an InP deep ridge TL[21]
    Material structure of the room temperature deep ridge InP TL[24]
    Common emitter mode opto-electronic properties an InP deep ridge TL[24]
    Common emitter mode light power and current gain of TLs having doping level from 0 to 1×1018cm-3 in the MQWs
    Schematic structure and current distribution of a-TL[26]
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    Song LIANG. InP Based Long Wavelength Transistor Lasers (Invited)[J]. Acta Photonica Sinica, 2020, 49(11): 116

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Mar. 11, 2021

    The Author Email:

    DOI:10.3788/gzxb20204911.1149008

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