Journal of Inorganic Materials, Volume. 36, Issue 1, 43(2021)

Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics

Jiawei BAI1... Jing YANG1,*, Zhenfei LÜ1, and Xiaodong TANG12,* |Show fewer author(s)
Author Affiliations
  • 1Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
  • 2Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
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    Figures & Tables(5)
    XRD patterns of BaFe12-xTixO19 with different Ti-doping contents
    SEM images of BaFe12-xTixO19 with different Ti-doping contents
    Hysteresis loops (a) ((b): magnified curves), relationship between x and Ms of BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) at room temperature (c)
    Frequency-dependent permittivity (a) and dielectric loss tangent (b) of BaFe12-xTixO19(x=0, 0.5, 1.5) at room temperature
    The impedance spectra of BaFe12-xTixO19 at x=0 (a) and x=1.5 (b) at 330 K with insets showing the enlarged drawing of corresponding region and the equivalent circuit model
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    Jiawei BAI, Jing YANG, Zhenfei LÜ, Xiaodong TANG. Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics [J]. Journal of Inorganic Materials, 2021, 36(1): 43

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    Paper Information

    Category: RESEARCH PAPER

    Received: Feb. 24, 2020

    Accepted: --

    Published Online: Jan. 21, 2021

    The Author Email: YANG Jing (jyang@ee.ecnu.edu.cn), TANG Xiaodong (xdtang@sist.ecnu.edu.cn)

    DOI:10.15541/jim20200088

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