Chinese Journal of Quantum Electronics, Volume. 33, Issue 6, 770(2016)
Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors
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CAI Jiafa, CHEN Xiaping, WU Shaoxiong, WU Zhengyun. Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors[J]. Chinese Journal of Quantum Electronics, 2016, 33(6): 770
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Received: Sep. 6, 2015
Accepted: --
Published Online: Jan. 3, 2017
The Author Email: Jiafa CAI (jfcai@xmu.edu.cn)
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