Chinese Journal of Quantum Electronics, Volume. 33, Issue 6, 770(2016)

Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors

Jiafa CAI*, Xiaping CHEN, Shaoxiong WU, and Zhengyun WU
Author Affiliations
  • [in Chinese]
  • show less

    The capacitance-voltage (C-V) characteristics of 4H-SiC p-i-n ultraviolet(UV) photodetector with temperature and bias voltage are analyzed and compared. The deep-level defects in 4H-SiC p-i-n structure are observed. Results show that the high-frequency (1 MHz) C-V characteristics almost do not change with reverse bias due to the fact that i-layer of detector is in depletion state under near zero bias. The high-frequency junction capacitances increase as the result of the number increasing of thermally ionized free carriers with the increasing of temperature. Low-frequency (100 kHz) junction capacitances of the detector have a stronger voltage and temperature dependence than that of high-frequency junction capacitance, and the reason is that the carriers trapped by the deep-level defects are ionized with increasing of reverse bias or temperature, which affects the junction capacitance.

    Tools

    Get Citation

    Copy Citation Text

    CAI Jiafa, CHEN Xiaping, WU Shaoxiong, WU Zhengyun. Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors[J]. Chinese Journal of Quantum Electronics, 2016, 33(6): 770

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Sep. 6, 2015

    Accepted: --

    Published Online: Jan. 3, 2017

    The Author Email: Jiafa CAI (jfcai@xmu.edu.cn)

    DOI:10.3969/j.issn.1007-5461. 2016.06.018

    Topics