Chinese Journal of Quantum Electronics, Volume. 33, Issue 6, 770(2016)
Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors
The capacitance-voltage (C-V) characteristics of 4H-SiC p-i-n ultraviolet(UV) photodetector with temperature and bias voltage are analyzed and compared. The deep-level defects in 4H-SiC p-i-n structure are observed. Results show that the high-frequency (1 MHz) C-V characteristics almost do not change with reverse bias due to the fact that i-layer of detector is in depletion state under near zero bias. The high-frequency junction capacitances increase as the result of the number increasing of thermally ionized free carriers with the increasing of temperature. Low-frequency (100 kHz) junction capacitances of the detector have a stronger voltage and temperature dependence than that of high-frequency junction capacitance, and the reason is that the carriers trapped by the deep-level defects are ionized with increasing of reverse bias or temperature, which affects the junction capacitance.
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CAI Jiafa, CHEN Xiaping, WU Shaoxiong, WU Zhengyun. Capacitance-voltage characteristics of 4H-SiC p-i-n ultraviolet photodetectors[J]. Chinese Journal of Quantum Electronics, 2016, 33(6): 770
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Received: Sep. 6, 2015
Accepted: --
Published Online: Jan. 3, 2017
The Author Email: Jiafa CAI (jfcai@xmu.edu.cn)