Chinese Optics Letters, Volume. 19, Issue 12, 121406(2021)
Influence of annealing temperature on the performance of TiO2/SiO2 nanolaminated films
Figures & Tables(14)
Fig. 1. Schematic diagrams of the structures of the nanolaminated films.
Fig. 2. Annealing programs of the samples at 400°C, 550°C, 700°C, and 850°C.
Fig. 3. Diffraction spectra of sample A-S0T4 before and after annealing; the inset shows the change in the diffraction angle.
Fig. 4. Surface morphologies of sample A-S0T4 before and after annealing: (a) before annealing, (b) after annealing at 400°C, (c) after annealing at 700°C, and (d) after annealing at 850°C.
Fig. 5. Diffraction spectra of the samples before and after annealing: (a) A-S1T3, (b) A-S2T2, and (c) A-S3T1.
Fig. 6. Surface morphologies of the samples before and after annealing: (a) before annealing of A-S1T3, (b) after annealing of A-S1T3 at 850°C, (c) before annealing of A-S2T2, (d) after annealing of A-S2T2 at 850°C, (e) before annealing of A-S3T1, and (f) after annealing of A-S3T1 at 850°C.
Fig. 8. Changes in the thickness and density of the four types of films with the annealing temperature.
Fig. 9. Changes in the elemental composition of the four types of films before and after annealing at 850°C.
Fig. 10. BE spectra for the four elements in different samples. (a) Ti 2p XPS core-line spectra: the BEs of Ti increased with decrease in the Ti content in the film before annealing. (b) Si 2p XPS core-line spectra: the BEs of Si increased with decrease in the Ti content in the film before annealing. (c) O 1s XPS core-line spectra: the BEs of O increased with decrease in the Ti content in the film before annealing. (d) Al 2p XPS core-line spectra: the BEs of Al increased with decrease in the Ti content in the film after annealing at 850°C.
Fig. 11. O 1s XPS core-line spectrum and the peak-fitting situation in sample A-S2T2 (a) before baking and (b) after annealing at 850°C.
Table 1. One Cycle of the
Table 1. One Cycle of the
Deposited Film Precursor Purity (N) Precursor Temperature Reaction Temperature (°C) Thickness of One Circle (nm) 3DMAS ( ) Room 150 0.103 (S) TDMAT ( ) 90°C 150 0.057 (T)
Table 2. Design Structures of the Nanolaminated Films
View tableView in ArticleTable 2. Design Structures of the Nanolaminated Films
Sample Total Thickness (nm) Nano-Laminated Structure Substrate A-S0T4 30 Sub/526T × 1 stack time A-S1T3 30 Sub/(10S37T) × 10 stack times A-S2T2 30 Sub/(10S12T) × 18 stack times A-S3T1 30 Sub/(10S4T) × 24 stack times
Table 3. Atomic Percentage and BE of Each Constituent Element of Sample A-S2T2 before and after Annealing at 850°C
View tableView in ArticleTable 3. Atomic Percentage and BE of Each Constituent Element of Sample A-S2T2 before and after Annealing at 850°C
State Type Ti 2p Si 2p Al 2p O 1s A (Ti–O) O 1s B (Si–O) O 1s C (Al–O) Before baking Atomic percentage (%) 26.0 9.0 – 46.2 18.8 – Binding energy (eV) 457.8 101.1 – 529.5 530.6 – After baking Atomic percentage (%) 18.9 11.1 5.7 29.8 22.7 11.8 Binding energy (eV) 458.0 102.1 73.1 529.6 531.6 530.7
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Yun Cui, Yuanan Zhao, Ge Zhang, Meiping Zhu, Chen Song, Chunxian Tao, Tan Shu, Jianda Shao. Influence of annealing temperature on the performance of TiO2/SiO2 nanolaminated films[J]. Chinese Optics Letters, 2021, 19(12): 121406
Paper Information
Category: Lasers, Optical Amplifiers, and Laser Optics
Received: Apr. 14, 2021
Accepted: Jul. 7, 2021
Published Online: Sep. 17, 2021
The Author Email: Yun Cui (cuiyun@siom.ac.cn)
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