Acta Photonica Sinica, Volume. 54, Issue 1, 0114001(2025)

Experimental Study of 450 nm Narrow-bandwidth Semiconductor Laser Based on Reflective Volume Bragg Grating

Botao CAO1... Yunhao YAN1, Congpeng CHAI1, Lingwei GUO2, Youjie HUA1, Shiqing XU1 and Shilong ZHAO1,* |Show fewer author(s)
Author Affiliations
  • 1College of Optics and Electronics,China Jiliang University,Hangzhou 310018,China
  • 2School of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China
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    Figures & Tables(10)
    VBG external cavity feedback wave locking principle
    Schematic diagram of the VBG wavelength locking device
    Schematic diagram of spectral detection device
    Wave lock spectra at rated current
    Laser spectra of free running state at different current(black line)and after VBG is added(red line)
    Spectrograms at different water cooling temperatures
    Stable lock-in diagram at different water cooling temperatures
    Lock-in diagram of distance change between VBG and SAC
    Power current curve and power ratio before and after wave locking
    • Table 1. VBG parameters

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      Table 1. VBG parameters

      Parameter nameParameter index
      Grating specification2 mm×1.5 mm×1.5 mm
      Central wavelength450±0.5 nm at 22 ℃ in air
      Diffraction efficiency17%±5%
      Spectral bandwidth<0.1 nm
      Transmittance91%±0.5%
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    Botao CAO, Yunhao YAN, Congpeng CHAI, Lingwei GUO, Youjie HUA, Shiqing XU, Shilong ZHAO. Experimental Study of 450 nm Narrow-bandwidth Semiconductor Laser Based on Reflective Volume Bragg Grating[J]. Acta Photonica Sinica, 2025, 54(1): 0114001

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    Paper Information

    Category:

    Received: Jul. 12, 2024

    Accepted: Sep. 5, 2024

    Published Online: Mar. 5, 2025

    The Author Email: ZHAO Shilong (zhaosl75@cjlu.edu.cn)

    DOI:10.3788/gzxb20255401.0114001

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