[1] [1] Knoll G F. Radiation Detection and Measurement[M]. Fourth Edition.Wiley,2010:864.

[3] [3] Schlesinger T E, Toney J E, Yoon H, et al. Cadmium zinc telluride and its use as a nuclear radiation detector material[J].Materials Science and Engineering:R:Reports,2001,32(4):103-189.

[4] [4] Rule T D. Experimental validation of (Cd, Zn)Te crystal growth model[D].Seattle:Washington State University,2002:48.

[5] [5] Zhang N, Yeckel A, Burger A, et al. Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride[J].Journal of Crystal Growth,2011,325(1):10-19.

[6] [6] Wang T, Jie W Q, Xu Y D, et al. Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques[J].Transactions of Nonferrous Metals Society of China,2009,19:S622-S625.

[7] [7] Haloui A, Feutelals Y, Legendre B. Experimental study of the ternary system Cd-Te-Zn[J].Journal of Alloys and Compounds,1997,260:179-192.

[8] [8] Greenberg J H. P-T-X phase equilibrium and vapor pressure scanning of non-stoichiometry in the Cd-Zn-Te system[J].Progress in Crystal Growth and Characterization of Materials,2003,47(2):196-238.

[9] [9] Rudolph P. Fundamental studies on Bridgman growth of CdTe[J].Progress in Crystal Growth and Characterization of Materials,1994,29(1):275-381.

[10] [10] Yu T C, Brebrick R F. The Hg-Cd-Zn-Te phase diagram[J].Journal of Phase Equilibria,1992,13(5):476-495.

[11] [11] Triboulet R. Fundamentals of the CdTe and CdZnTe bulk growth[J].Physica Status Solidi(C),2005,2(5):1556-1565.

[12] [12] Toney J E, Schlesinger T E, James R B. Optimal bandgap variants of Cd1-xZnxTe for high-resolution X-ray and gamma-ray spectroscopy[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,1999,428(1):14-24.

[13] [13] Szeles C, Driver M C. In Growth and properties of semi-insulating CdZnTe for radiation detector applications[J].Proceedings of SPIE,1998:2-9.

[14] [14] Szeles C, Eissler E E. Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe[J]. Materials Research Society: Symposia Proceedings,1998,484:309-318.

[15] [15] Hilton N R. Material uniformity of cadmium zinc telluride in gamma-ray imaging detectors[D].Tucson:University of Arizona,2002.

[17] [17] Doty F P, Butler J F, Schetzina J F, et al. Properties of CdZnTe crystals grown by a high pressure Bridgman method[J].Journal of Vaccum Seience & Technology B, 1992,10(4):1418-1422.

[18] [18] Szeles C, Cameron S E, Ndap J O, et al. Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications[J].IEEE Transactions on Nuclear Science,2002,49(5):2535-2540.

[19] [19] Szeles C, Cameron S E, Ndap J O, et al. Advances in the high-pressure crystal growth technology of semi-insulating CdZnTe for radiation detector application[J].Proceedings of SPIE,2004,5198:191-199.

[20] [20] Szeles C. Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors[J].IEEE Transactions on Nuclear Science,2004,51(3):1242-1249.

[21] [21] Szeles C. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications[J].Physica Status Solidi (B),2004,241(3):783-790.

[22] [22] Szeles C, Cameron S E, Soldner S A, et al. Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications[J].J.Electron.Mater.,2004,33:742.

[23] [23] Li L, Lu F, Lee C, et al. In new progress in large-size CZT (Zn=10%) single crystal growth using MVB technique for room temperature radiation detectors[J].IEEE Symposium Conference Record Nuclear Science,2004,4:2320-2323.

[24] [24] Awadalla S A, Lynn K G, Wei S H, et al. Effect of Zn on the cation vacancy-isoelectronic oxygen pair in Cd1-xZnxTe crystals[J].Physical Review B,2004,70(24):245213.

[25] [25] Gasperino D, Bliss M, Jones K, et al. On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace[J].Journal of Crystal Growth,2009,311(8):2327-2335.

[26] [26] Datta A, Swain S, Cui Y, et al. Preliminary results on Bridgman grown CdZnTe detector crystals assisted by ampoule rotation[J].Hard X-Ray,Gamma-Ray,and Neutron Detector Physics XIV,2012,8507:850711.

[27] [27] Lynn K. Overcoming mobility lifetime product limitations in vertical Bridgman production of cadmium zinc telluride detectors[J].Journal of Electronic Materials2019,48(7):07196.

[28] [28] Zha M, Zappettini A, Bissoli F, et al. Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals[J].Journal of Crystal Growth,2004,260(3-4):291-297.

[29] [29] Zha M, Zappettini A, Calestani D, et al. Full encapsulated CdZnTe crystals by the vertical Bridgman method[J].Journal of Crystal Growth,2008,310(7-9):2072-2075.

[30] [30] Sordo S D, Abbene L, Caroli E, et al. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications[J].Sensors (Basel),2009,9(5):3491-526.

[31] [31] Abbene L, Gerardi G, Turturici A A, et al. X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects[J].Nucl Instrum Methods Phys Res Sect A,2016,835:1-12.

[32] [32] Abbene L, Gerardi G, Raso G, et al. Development of new CdZnTe detectors for room-temperature high-flux radiation measurements[J].J. Synchrotron Radiat.,2017,24(2):429-438.

[33] [33] Carcelen V, Hidalgo P, Rodriguez-Fernandez J, et al. Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses[J].Journal of Applied Physics,2010,107(9):4.

[34] [34] Crocco J, Bensalah II, Zheng Q, et al. Influence of SiC pedestal in the growth of 50 mm CZT by Vertical gradient freeze method[J].Journal of Crystal Growth,2012,360:92-94.

[35] [35] Shkir M, Ganesh V, AlFaify S, et al. Large size crystal growth, photoluminescence, crystal excellence, and hardness properties of In-doped cadmium zinc telluride[J].Crystal Growth & Design,2018,18(4):2046-2054.

[36] [36] Yang F, Jie W, Wang M, et al. Growth of Single-crystal Cd0.9Zn0.1Te ingots using pressure controlled bridgman method[J].Crystals,2020,10(261):8.

[37] [37] Broder J D, Wolff G A. A new method of GaP growth[J].Journal of the Electrochemical Society,1963,110(11):1150-1153.

[38] [38] Triboulet R, Van K P, Didier G. Cold traveling heater method, a novel technique of synthesis, purification and growth of CdTe and ZnTe[J].Journal of Crystal Growth,1990,101(1-4):216-220.

[39] [39] Triboulet R, Marfaing Y. CdTe growth by “multipass thm” and “sublimation thm”[J].Journal of Crystal Growth,1981,51(1):89-96.

[40] [40] El Mokri A, Triboulet R, Lusson A, et al. Growth of large, high purity, low cost, uniform CdZnTe crystals by the “cold travelling heater method” [J].Journal of crystal growth,1994,138(1):168-174.

[41] [41] Funaki M, Ozaki T, Satoh K, et al. Growth and characterization of CdTe single crystals for radiation detectors[J].Nuclear Instruments and Methods in Physics Research A,1999,436:120-126.

[42] [42] Shiraki H, Funaki M, Ando Y, et al. THM Growth and Characterization of 100 mm Diameter CdTe Single Crystals[J]. IEEE Transactions on Nuclear Science,2009,56(4):1717-1723.

[43] [43] Chen H, Awadalla S A, Iniewski K, et al. Characterization of large cadmium zinc telluride crystals grown by traveling heater method[J].Journal of Applied Physics,2008,103(1):014903.

[44] [44] Prokesch M, Soldner S A, Sundaram A, et al. CdZnTe detectors operating at X-ray fluxes of 100 million photons/(mm2?s) [J].IEEE Trans. Nucl. Sci.,2016,63:1854.

[45] [45] Wei G, Wang L, Zhang J, et al. Growth and characterization of indium-doped Cd1-xZnxTe crystal by traveling heater method[J].Nucl Instrum Methods Phys. Res. Sect. A,2013,704:127-130.

[48] [48] Zhou B, Jie W, Wang T, et al. Growth and characterization of detector-grade Cd0.9Zn0.1Te crystals by the traveling heater method with the accelerated crucible rotation technique[J].Journal of Electronic Materials,2018,47(2): 1125-1130.

[49] [49] Zhou B, Jie W, Wang T, et al. Modification of growth interface of CdZnTe crystals in THM process by ACRT[J].Journal of Crystal Growth,2018,483: 281-284.

[50] [50] Mackenzie J, Chen H, Awadalla S A, et al. In Recent advances in THM CZT for nuclear radiation detection[J]. Materials Research Society,2009:4.

[51] [51] Chen H, Awadalla S A, Harris F, et al. Spectral response of THM grown CdZnTe crystals[J].IEEE Transactions on Nuclear Science,2008,55(3):1567-1572.

[52] [52] Chen H, Awadalla S A, Marthandam P, et al. In CZT device with improved sensitivity for medical imaging and homeland security applications[J].Hard X-Ray,Gamma-Ray,and Neutron Detector Physics XI,San Diego,CA,San Diego,CA,2009,7449:828514.

[53] [53] Iniewski K.CZT sensors for Computed Tomography: from crystal growth to image quality[J].Journal of Instrumentation,2016,11(12):C12034-C12034.