CdZnTe (CZT) crystal has been considered as one of the most promising materials for room temperature semiconductor detector, with the advantages of high energy resolution, small volume and portability. With the rapid development of large-area CZT pixel detectors and the demand for high-energy and high-flux X-ray detection, higher requirements are put forward for the quality and size of CZT materials. In this paper, based from the basic physical properties of CZT crystal, the factors influencing the growth of large size CZT crystal were discussed. The research progress of two main CZT growth methods, Bridgman method and Travelling Heater method (THM) were summarized.