Chinese Journal of Quantum Electronics, Volume. 21, Issue 1, 18(2004)

Spectral and Luminescence Properties of(Yb0.05Y0.95)3Al5O12Crystal Grown by TGT

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    References(9)

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    [3] [3] Fan T Y, Klunk S, Henein G. Diode-pumped Q-switched Yb:YAG laser [J]. Opt. Lett., 1993, 18(6): 423-425.

    [4] [4] Bruesselbach H. Presented at the Optical Society of America 2001 Annual Metting [C] // Long Beach, Calif.:October 2001, 14-18.

    [5] [5] Dascalu T, Taira T, Pavel N. 100 W quasi-continupus-wave diode radially pumped microchip composite Yb:YAG laser [J]. Opt. Lett., 2002, 27(20): 1791-1793.

    [6] [6] Yang Peizhi, Deng Peizhen, Xu Jun, et al. Growth of high-quality single crystal of 30 at% Yb:YAG and its laser performance [J]. J. Cryst. Growth, 2000, 216: 348-351.

    [7] [7] Zhou Yongzhong. Growth of high quality Nd:YAG crystals by temperature gradient technique (TGT) [J]. J.Cryst. Growth, 1986, 78: 31.

    [10] [10] Honninger C, Kartner F X, Zhang G, et al. Fentosecond modelocked Yb:YAG laser [J]. Advanced Solid-State Lasers, 1996, 1: 16-18.

    [11] [11] Brauch U, Giesen A, Karszewski M, et al. Multiwatt diode-pumped Yb:YAG thin disk laser continuously tunable between 1018 and 1053 nm [J]. Opt. Lett., 1995, 27(7): 713-715.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Spectral and Luminescence Properties of(Yb0.05Y0.95)3Al5O12Crystal Grown by TGT[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 18

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    Paper Information

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    Received: Jan. 22, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (2zw8006@sina.com)

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