Advanced Photonics, Volume. 3, Issue 5, 054001(2021)
Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review
Fig. 1. CCs and traditional and quantum SRM. (a) Conceptual representation of a vacancy in a wide bandgap semiconductor, giving origin to a three or more levels system made of a ground state (GS) (with spin triplets, depending on the spin number), an excited state (ES), and a metastable state (MS) or intersystem crossing state. (b) The NV and the SiV in diamond are used for SRM methods. (c) 2D hBN showing the boron vacancy. (d) The CAV pairs that can be used for SRM due to their photoswitching properties.59 (e) Traditional SRM methods schematics such as STED, based on depletion of ES via stimulated emission, and SMLM as fully nondeterministic methods, based on the photoswitching of the fluorophore. CSD microscopy originated from the charge conversion of NV from the negative to neutral state, using three laser probes in a more complex approach than STED. STED figure is reproduced from Ref. 60; with permission copyright (2010) John Wiley and Sons, Inc., CSD and Spin-SMLM figures are reproduced from Refs. 48 and 35, under Creative Commons Attribution-NonCommercial-NoDerivs (BY-NC-ND) 4.0 International license. A detailed description of the schematics is provided in the references. (f) Conceptual schematics of the quantum-enhanced SRM developed based on antibunching, giving rise to the mapping of localized single emitters from the spatial imaging of single emitters using a bundle of fibers and array of SPADs and time-correlated single-photon counting (TCSPC).57
Fig. 2. STED applied to FNDs and green FNDs in cells. (a) Scanning confocal image of a BSA-conjugated NV-FND-labeled cell in the white rectangle. (b) STED image of single BSA-conjugated FND enclosed within the green rectangle in (a). (c) Confocal and STED fluorescence intensity profiles of the FND indicated in (b). Solid curves represent the best fits for Gaussian (confocal) or Lorentzian (STED) functions with the FWHM. Images reproduced with permission from Ref. 101, © 2011 John Wiley and Sons, Inc. (d) Superresolution imaging of green FNDs up-taken into an HeLa cell, which is tagged in red with an organic dye. The main image is a confocal scan. The green FNDs appear green, and the absence of fluorescence inside the cells reveals the positions of the nuclei. The two insets are magnified images of the highlighted area of the cell. Scale bars are
Fig. 3. Spin-STED applied to multiple isolated
Fig. 4. (a) Schematic of the experimental conditions used to perform GSD nanoscopy applied to hBN flakes with one or two excitation lasers with doughnut-shaped intensity profiles. Here, 532 nm is used as a repumping laser. The direct images and deconvoluted ones are shown in the presence of only the 532-nm or both 532- and 708-nm lasers, together with the resolution achieved, showing an improved resolution in the presence of the two lasers. Images reproduced from Ref. 119, Creative Commons BY license. (b) Schematic representation of GSD microscopy applied to
Fig. 5. (a) Spin STORM applied to
Fig. 6. (a) Schematic of a confocal laser scanning microscope equipped with SPADs and a third-order correlation electronics. (b) Diffraction-limited image from the confocal point of three NV centers in bulk diamond. (c) Map of the
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Stefania Castelletto, Alberto Boretti. Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review[J]. Advanced Photonics, 2021, 3(5): 054001
Category: Reviews
Received: May. 21, 2021
Accepted: Aug. 19, 2021
Published Online: Sep. 18, 2021
The Author Email: Castelletto Stefania (stefania.castelletto@rmit.edu.au)