Laser & Optoelectronics Progress, Volume. 56, Issue 9, 091402(2019)

Packaging of Semiconductor Laser Bars in Tube Furnace

Qiuyue Zhang1, Hongqi Jing2, Qinghe Yuan2, Xiaoyu Ma2, and Lianhe Dong1、*
Author Affiliations
  • 1 Institute of Opto-Electronics Engineer, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    Figures & Tables(6)
    Epitaxial structure
    Structural diagram of packing of semiconductor laser bar
    X-ray patterns of samples at different tube furnace temperatures. (a) 600 ℃; (b) 650 ℃; (c) 700 ℃
    Test system of semiconductor laser bar
    Smile effect imaging at different soldering time. (a) 100 s; (b) 110 s; (c) 120 s
    • Table 1. Photoelectric parameters of 100 W semiconductor laser bar

      View table

      Table 1. Photoelectric parameters of 100 W semiconductor laser bar

      Serial numberSolderingtime /sOutputpower /WThresholdcurrent /AOperatingcurrent /AOperatingvoltage /VPhotoelectricefficiency /%
      1100101.018.421131.8044.8
      2110102.517.151141.7647.0
      3120100.418.721141.9445.9
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    Qiuyue Zhang, Hongqi Jing, Qinghe Yuan, Xiaoyu Ma, Lianhe Dong. Packaging of Semiconductor Laser Bars in Tube Furnace[J]. Laser & Optoelectronics Progress, 2019, 56(9): 091402

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Sep. 5, 2018

    Accepted: Nov. 27, 2018

    Published Online: Jul. 5, 2019

    The Author Email: Dong Lianhe (custdong@126.com)

    DOI:10.3788/LOP56.091402

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