Journal of Semiconductors, Volume. 44, Issue 8, 081701(2023)
State-of-the-art advances in vacancy defect engineering of graphitic carbon nitride for solar water splitting
Figures & Tables(15)
Fig. 1. (Color online) Schematic illustration of the fundamental mechanism of solar water splitting with g-C3N4.
Fig. 3. (Color online) Schematic illustration of the preparation of vacancy-modified g-C3N4 by thermal treatment method with suitable etching agent. The vacancy-modified g-C3N4 was prepared using (a) H2 mixed with N2 (Copyright 2022, Elsevier)[31], (b) NH3 (Copyright 2015, Wiley)[32], and (c) KOH as etching agents (Copyright 2018, Elsevier)[34], respectively.
Fig. 4. (Color online) Schematic illustration of the preparation of vacancy-modified g-C3N4 by strong alkali treatment of prepared g-C3N4 or its precursors. The vacancy-modified g-C3N4 was prepared by (a) the facile urea- and KOH-assisted thermal polymerization strategy (Copyright 2020, American Chemical Society)[18], (b) the alkali-molten salt-assisted method (Copyright 2023, Elsevier), respectively[37].
Fig. 5. (Color online) Schematic illustration of the preparation of vacancy-modified g-C3N4 by chemical treatment strategy. The vacancy-modified g-C3N4 were prepared by (a) the calcination of g-C3N4 and NaBH4 strategy (Copyright 2019, Wiley)[39], (b) thermally polymerizing the mixture of dicyandiamide and NH4Cl method (Copyright 2020, Elsevier)[40], and (c) thermal polymerization of the mixture of fumaric acid and urea (Copyright 2021, American Chemical Society), respectively[43].
Fig. 6. (Color online) Schematic illustration of the preparation of vacancy-modified g-C3N4. The vacancy-modified g-C3N4 was prepared via (a) solvothermal treatment of g-C3N4-bulk in various organic solvents (Copyright 2022, American Chemical Society)[47], (b) mechanical ball-milling of the intermediate (melem) with succedent calcination (Copyright 2020, American Chemical Society)[52], respectively.
Fig. 7. (Color online) (a) Ultraviolet visible diffuse reflection spectrum(UV-vis DRS) and (b) plots of Kubelka-Munk formula of as-prepared photocatalysts (Copyright 2022, Elsevier)[53]. (c) UV-vis DRS and (d) band structure Illustration of g-C3N4 samples with ascending NV concentration (Copyright 2019, Elsevier)[54].
Fig. 10. (Color online) (a) Illustration of the photocatalytic water reduction for as-developed heterojunction (Copyright 2022, Elsevier)[64]. (b) PL spectra, (c) time-resolved PL spectrum, (d) photocurrent response of pristine g-C3N4, homojunction and defected homojunction (Copyright 2021, Elsevier)[65].
Fig. 11. (Color online) (a) A schematic of perfect (i), CV2-defected g-C3N4 (ii) structure and the electron trap (iii) in defected structure (Copyright 2021, Elsevier)[67]. (b) A schematic of heat-exfoliation synthetic route of the N-defected photocatalyst. (c) A TEM image of the CN-UNS. (d) A nitrogen absorption-desorption isotherm and the pore distribution diagram of the CN-UNS (Copyright 2022, Elsevier)[70]. (e) A SEM image and (f) nitrogen absorption-desorption isotherm of the as-prepared g-C3N4 nanotubes (Copyright 2018, Elsevier)[71].
Fig. 13. (Color online) (a) UV-vis DRS of as-prepared photocatalysts. (b) The stability test of the g-C3N4 nanotube photocatalyst (Copyright 2021, Elsevier)[48]. (c) The nitrogen absorption-desorption isotherm of the S-doped and N-deficient g-C3N4 (Copyright 2022, Elsevier)[78]. (d) SEM image of granular g-C3N4 obtained at 510 °C (Copyright 2021, Wiley Online Library)[76].
Fig. 14. (Color online) (a) The band structure and hydrogen evolution mechanism of the as-developed photocatalysts (Copyright 2021, Elsevier)[79]. (b) The band structure and S-scheme photocatalytic mechanism of the hybridization (Copyright 2023 Elsevier)[85]. The TAS plots (c) and contact angle measurements (d) of PCN and N-defected PCN (Copyright 2019, Elsevier)[39].
Table 1. Representative summary of vacancy-defected g-C3N4 photocatalyst for H2 production.
View tableView in ArticleTable 1. Representative summary of vacancy-defected g-C3N4 photocatalyst for H2 production.
Year Photocatalyst Cocatalyst (%) Illumination condition Reaction solution (vol%) HER (μmol/(g·h)) AQY (%) (wavelength) Stability (h) Ref. 2021 N-deficient g-C3N4 Pt wt 300 W Xe lamp Methanol 20 vol 287.94 3.06 (420 nm) 12 [ 68 ]2021 Porous N-deficient g-C3N4v nanotubes Pt wt 3 425 mW/cm2 λ ≥ 420 nm TEOA 10 8.52 × 103 5.6 (420 nm) 64 [ 48 ]2021 Granular C-deficient g-C3N4 nanotubes Pt wt 1 300 W Xe lamp Methanol 20 3281.2 _ 18 [ 76 ]2021 C-deficient g-C3N4 nanosheets Pt wt 3 300 W λ ≥ 420 nm TEOA 10 1.86 × 103 _ 16 [ 80 ]2022 Ultrathin porous g-C3N4 nanosheets with N vacancy Pt wt 3 300 W λ ≥ 420 nm TEOA 10 5.74 × 103 14.9 (420 nm) 18 [ 70 ]2020 Porous and thin-layered g-C3N4 with N vacancy Pt wt 3 300 W λ ≥ 420 nm TEOA 20 1.557 × 103 11.2 (420 nm) 20 [ 18 ]2021 Porous g-C3N4 nanosheets with C and N vacancies Pt wt 1 100 mW/cm2 365~940 nm TEOA 10 297.6 12.7 (420 nm) 20 [ 81 ]2021 N-O double vacancy defected g-C3N4 Pt wt 3 300 W λ ≥ 420 nm TEOA 10 595 _ 20 [ 79 ]2020 O-doped and N-defected g-C3N4 Pt wt 3 300 W λ ≥ 420 nm TEOA 10 2.20 × 103 9.19 (420 nm) 20 [ 77 ]2022 S-doped and N-defected mesoporous g-C3N4 Pt wt 1.5 300 W λ ≥ 400 nm TEOA 5 4.441 × 103 6.8 (420 nm) 12 [ 78 ]2022 Carbon species inserted g-C3N4 with N vacancy Pt wt 2 300 W AM 1.5 G TEOA 10 1.4582 × 104 6.98 (420 nm) 15 [ 82 ]2023 Crystalline g-C3N4 with N vacancy Co3O4 wt 3 Pt wt 1 300 W λ ≥ 420 nm Lactic acid 10 3.78 × 103 11.94 (400 nm) 15 [ 37 ]2022 N-deficient g-C3N4 hybridized with Cu2O Pt wt 3 350 W λ ≥ 400 nm TEOA 30 420.3 0.87 (420 nm) 12 [ 83 ]2022 Ni-Co NP modified N-deficient g-C3N4 nanotubes _ 300 W λ ≥ 420 nm TEA 30 205.5 _ 16 [ 84 ]2023 N-deficient g-C3N4/NiO heterojunction _ 300 W Xe lamp TEOA 15 169.5 _ 16 [ 85 ]2023 N-deficient g-C3N4/CdS heterojunction Ag wt 0.4 300 W λ ≥ 420 nm TEOA 10 204.19 3.94 (450 nm) 16 [ 86 ]
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Jie Li, Kaige Huang, Yanbin Huang, Yumin Ye, Marcin Ziółek, Zhijie Wang, Shizhong Yue, Mengmeng Ma, Jun Liu, Kong Liu, Shengchun Qu, Zhi Zhao, Yanjun Zhang, Zhanguo Wang. State-of-the-art advances in vacancy defect engineering of graphitic carbon nitride for solar water splitting[J]. Journal of Semiconductors, 2023, 44(8): 081701
Paper Information
Category: Articles
Received: Feb. 8, 2023
Accepted: --
Published Online: Sep. 21, 2023
The Author Email: Huang Yanbin (huangyb@hebeu.edu.cn), Wang Zhijie (wangzj@semi.ac.cn), Yue Shizhong (yueshizhong@semi.ac.cn)
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