Fig. 1. Graphic design scheme of standard template

Fig. 2. Process design flow chart of high-aspect-ratio trench standard template

Fig. 3. Process flow chart of SOI chip processing

Fig. 4. (a) Physical map of the standard template; (b) Scribing map of the standard template

Fig. 5. Schematic diagram of the characterization position and uniformity assessment of the high-aspect-ratio trench standard template

Fig. 6. Location map of wafer sample uniformity assessment

Fig. 7. Definition of groove depth measurement

Fig. 8. Measurement result of the standard template sample under SEM

Fig. 9. Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 10 μm

Fig. 10. Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 60 μm

Fig. 11. Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 200 μm

Fig. 12. Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 300 μm

Fig. 13. Measurement results of the 30-300 μm standard sample template in the near-infrared broad-spectrum interference microscopy measurement system