Single crystal diamond has ultra-wide band gap, low dielectric constant, high breakdown voltage, high thermal conductivity, high intrinsic electron and hole mobility, and excellent radiation resistance, making it the most promising wide band gap high temperature semiconductor material known so far, known as the “ultimate semiconductor”. However, there are still many technical problems to be solved in the large-scale application of single crystal diamond on semiconductors. This paper focuses on the chemical vapor deposition synthesis, stripping section and grinding and polishing technology of large size (inch) single crystal diamond substrates. By sorting out the relevant literature in recent years, the related research status at home and abroad are reviewed. On this basis, the preparation, stripping, grinding and polishing of single crystal diamond semiconductor materials in the future are prospected.