Fig. 1. The morphology, length, and diameter distribution of GaAs nanowires: (a) Side SEM image of GaAs nanowires; (b) GaAs nanowires length distribution; (c) plane SEM image of GaAs nanowires, inset is the shape of the nanowire; (d) GaAs nanowires diameter distributionGaAs纳米线形貌及纳米线长度直径分布　(a) GaAs纳米线侧面SEM图像; (b) GaAs纳米线长度分布统计图; (c) GaAs纳米线平面SEM图像, 插图为纳米线形状; (d) GaAs纳米线直径分布统计图

Fig. 2. Variable power PL spectrum: (a) The change of luminescence peak position with temperature 10−140 K; (b) fitting curve of the peak position of P1 and P2 luminescence with the change of temperatureGaAs纳米线变温PL光谱测试图　(a)发光峰位随温度10−140 K的变化; (b) P1, P2发光峰峰位随温度变化的拟合曲线

Fig. 3. Variable power PL spectrum: (a) The PL spectral curve with different power is illustrated as the peak ratio of P2, P1 changing with power; (b) the relationship between P1 peak and P^1/3; (c) the relationship between P2 peak intensity and power 变功率PL光谱测试图　(a)不同功率下PL光谱曲线, 插图为P2, P1峰强比随功率变化曲线; (b) P1峰位与P^1/3的关系; (c) P2峰强与功率的关系

Fig. 4. Raman spectra of GaAs nanowires and GaAs substrateGaAs纳米线及GaAs衬底的Raman光谱图

Fig. 5. Transmission electron microscopy (TEM) image of GaAs nanowires: (a) The low resolution TEM; (b) the high resolution TEM; (c) the selected area electron diffraction imageGaAs纳米线透射电子显微镜(TEM)图像　(a)低分辨TEM图像; (b)HRTEM图像; (c)为选区电子衍射图像