Acta Physica Sinica, Volume. 69, Issue 1, 017301-1(2020)
Fig. 2. (a) The eight possible polarization directions for an unpoled PMN-PT single crystal: r1+, r2+, r3+, r4+, r1–, r2–, r3–, r4–[12]; (b)
Fig. 3. (a) Polarization-Electric field (
Fig. 4. (a) Schematic of the graphene/PZT/STO heterostructure[20]; (b) AFM image of a multilayer graphene sheet on a 300 nm PZT film[21]; (c) the channel resistivity of graphene/PZT FeFET as a function of the gate voltage with different memory operation[21].
(a) 石墨烯/PZT/STO异质结的示意图[20]; (b) 300 nm PZT上的多层石墨烯AFM图[21]; (c) 不同栅压走向下, 石墨烯/PZT FeFET的电阻率
Fig. 5. (a)
Fig. 6. (a) Scheme of the electrical measurements of graphene/PZT FeFETs at different polarization state of PZT[28]; (b) after application of the write (
Fig. 7. (a) Schematic of the electro-mechanical device used to apply in-plane biaxial strain to the graphene[33]; (b) D, G, 2D and 2D’ peaks plotted as a function of the biaxial strain
Fig. 8. (a) The
Fig. 9. (a) The electric displacement field
Fig. 10. (a) Photograph of the graphene/P(VDF-TrFE)/graphene based acoustic device and the measurement circuit[47]; (b) schematic depiction showing graphene/P(VDF-TrFE)/graphene-based device can work as an actuator as well as a nanogenerator[47]; (c) schematics and photograph of graphene/PVDF/graphene based generator and loudspeaker[48]; (d) photographic image of the pressure measurement setup showing the pressurized gas inlet, the sensor mounting, and the data acquisition system[49]; (e) short-circuit current of the P(VDF-TrFE)/PMN-PT/GO film when attached on the human hand[51]; (f) a schematic of data writing and reading on GO/P(VDF-TrFE) Multilayer film by a PFM tip[52]. (a) 基于石墨烯/P(VDF-TrFE)/石墨烯复合结构的声压器件和测试回路照片[47]; (b) 基于石墨烯/P(VDF-TrFE)/石墨烯复合结构的声压驱动器和纳米发电机的示意图[47]; (c) 基于P(VDF-TrFE)/石墨烯复合结构的发电机和话筒的示意图和照片[48]; (d) 基于P(VDF-TrFE)/石墨烯复合结构的压力测试装置[49]; (e) 当被粘贴在手上时P(VDF-TrFE)/PMN-PT/GO薄膜的短路电流[51]; (f) 用PFM探针在GO/P(VDF-TrFE)上写入和读取数据的示意图[52]
Fig. 11. (a) Schematic diagram of the PZT back gated MoS2 FeFET[57]; (b) the transfer curves of MoS2/PZT FET. Memory window variation with increasing
Fig. 12. (a)
Fig. 13. (a) Device schematic of the 2D TMD/PZT heterostructure[65]; (b) effect of different polarization state for PZT on the PL spectra of WSe2[65]; (c, d) the maps of integrated PL intensity under down- and up-polarized states, respectively[64]; (e) PL peak intensity map obtained from the WS2 monolayer over a 30 × 30 μm2 area under different polarized states[66]; (f) raw PL spectra (solid black line) and fits (dashed green line) using two Lorentzians centered at 2.01 eV (red line) and 1.99 eV (blue line)[66]. (a) 2D/PZT FeFET的结构示意图[65]; (b) PZT不同极化态对WSe2 PL光谱的影响[65]; (c, d) PZT不同极化态下, WSe2的PL发光分布图[65]; (e) PZT不同极化态下, WS2的PL发光分布图[66]; (f) PZT不同极化态下, WS2的PL光谱及拟合曲线[66]
Fig. 14. (a) Schematic diagram of MoS2/PMN-PT composite[11]; (b)
Fig. 15. (a) Schematic showing the three-phase coupling among magnetism, semiconductor, and piezoelectricity[68]; (b) 3D schematic illustration of an MoS2-based MIPG-FET[68]; (c) transient response of the MIPG-FET at
Fig. 16. (a) Schematic 3D top-view of the MoS2-FET[69]; (b) Detailed plots of SS and
Fig. 17. (a) 3D schematic diagram of the P(VDF-TrFE) top gated MoS2 phtodetector with light beam[75]; (b) photoswitching behavior of ferroelectric polarization gating triple-layer MoS2 photodetector at three states[75]; (c) the schematic diagram of back-gate MoTe2 FET in which HfO2 of 30 nm is deposited on MoTe2 before coating P(VDF-TrFE) polymer[77]; (d) drain-source characteristics of the In2Se3 phtodetector in the dark and under different illuminating light wavelength (520−1550 nm)[76]. (a) P(VDF-TrFE)顶栅MoS2光电FET在光照下的3D模型图[75]; (b) P(VDF-TrFE)处于不同极化状态时, MoS2光电FET的光开关行为[75]; (c) 以P(VDF-TrFE)顶栅并中插HfO2薄膜的MoTe2光电FET示意图[77]; (d) 在黑暗及不同光照强度(520−1550 nm)下, In2Se3光电FET的伏安特性曲线[76]
Fig. 18. (a) The optical micrograph shows preferential growth of single-layer MoS2 on LiNbO3 domains[80]; PL mapping of exfoliated monolayer (b) MoSe2 and (c) WSe2 on a single polarized domain. The gold dashed line indicates one single dipole[81]; (d) a sketch of the experiment geometry in MoS2/BaTiO3/SrRuO3 junctions[85]; (e)−(f) PFM phase images of MoS2/BaTiO3/SrRuO3 junctions acquired in the dark before and after UV illumination[85]. (a) 单层薄膜在LiNbO3铁电畴上择优生长的光学照片和在单极化域上的双层[80]; (b) MoSe2和(c) WSe2的光致发光分布图[81]; (d) 在MoS2/BaTiO3/SrRuO3上的测试示意图[85]; (e−f) MoS2/BaTiO3/SrRuO3在紫外光照前后的PFM相图[85]
Fig. 19. (a) The resistance
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Hui Wang, Meng Xu, Ren-Kui Zheng.
Received: Sep. 29, 2019
Accepted: --
Published Online: Nov. 4, 2020
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