Infrared and Laser Engineering, Volume. 50, Issue 1, 20211019(2021)

Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)

Liyuan Song1...2,3, Libin Tang1,2,3,* and Qun Hao1,* |Show fewer author(s)
Author Affiliations
  • 1The Laboratory of Photonics Information Technology, Ministry of Industry and Information Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 2Kunming Institute of Physics, Kunming 650223, China
  • 3Yunnan Key Laboratory of Advanced Photoelectronic Materials & Devices, Kunming 650223, China
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    Figures & Tables(8)
    [in Chinese]
    [in Chinese]
    [in Chinese]
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    [in Chinese]
    • Table 1. [in Chinese]

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      Table 1. [in Chinese]

      Preparation methodsMorphological structureFeaturesYearRef.
      MBESnTe-based films and superlatticesThe structure parameters of the PbTe/SnTe superlattice were determined by the selected buffer layer material 1997[23]
      MBESi (111) substrate/ SnTe thin film The electronic structure of the film was adjustable by changing thickness and lead doping level 2014[24]
      MBEBaF2(001) substrate/ SnTe film By increasing the growth temperature, the film has higher mobility and lower carrier concentration 2014[25]
      MBESapphire substrate/Bi2Te3 buffer layer/SnTe film Dirac electrons on the SnTe (111) surface was gained by transmission measurements on a high quality film grown on the Bi2Te3 buffer layer 2014[26]
      MBEBaF2substrate/SnTe film By optimizing the growth conditions and film thickness, the carrier concentration is reduced, which conduced to study the surface magnetic transport characteristics2015[27]
      MBEGaAs (111) A substrate/CdTe/ SnTe film Single-phase very low hole concentration of SnTe (111) can be obtained by optimizing the growth temperature of SnTe and CdTe layers and the growth rate of SnTe 2016[28]
      MBESubstrate/Bi2Te3 buffer layer/SnTe film An efficient photoconductive photodetector was prepared based on 10 nm TCI SnTe 2017[29]
      CVDSnTe nanowireThe exposed surface of SnTe micro-nano structure can be adjusted by experimental parameters such as temperature2014[30]
      CVDSnTe nanoribbonThe controlled growth of crystal surface of SnTe nanocrystals {100} can be realized by Bi doping2016[31]
      CVDSnTe thin film/n-Si Nps heterojunctionA photovoltaic photodetector was prepared based on SnTe/Si Nps heterojunction 2017[32]
      PVDSnTe thin film/n-Si heterojunctionA photovoltaic photodetector was prepared based on SnTe/Si heterojunction 2017[33]
      PVDSnTe flakeA field effect transistor photodetector was prepared based on SnTe single crystal 2018[34]
      PVDSnTe thin film/n-Bi2Se3 heterojunction A photovoltaic photodetector was prepared based on SnTe/Bi2Se3 heterojunction 2020[19]
      Hot wall epitaxySnTe-based films and superlatticesThe prepared EuTe/SnTe SL showed a high mobility of 2720 cm2/(V·S) at room temperature. The Seebeck coefficients of SnTe/PbSe and SnTe/PbS SLs can be close to those of PbSe and PbS 2009[35]
      Solution-phase synthesisSnTe quantum dotBy changing the growth temperature, concentration of reaction mixture, etc., the average diameter of SnTe NCs was adjustable within 4.5-15 nm, and the band gap correspondingly is 0.8-0.38 eV. It can be used in near-infrared photoelectric devices 2007[36]
      Solution-based synthesisSnTe nanostructureThe shape/size controlled preparation of SnTe nanotubes, nanorods and nanowires promotes the application of colloidal infrared active nanomaterials in practical technologies2015[37]
      Vapor-liquid− solid growth SnTe nanoplatesSnTe nanoplate were prepared with large {100} or {111} surface areas, allowing selective study of the surface states on these surfaces. The phase transition from rock salt structure to rhombic structure was observed at low temperature 2014[38]
      Solid solution alloyingSn 1.03−x Mg x Te ingot Adjusting the SnTe electron band structure by Mg doping, the Seebeck coefficient was improved and the thermoelectric property was optimized2014[39]
      Microwave solvothermal methodSe/Cd co-doped SnTe octahedral particlesBy using the strategy of co-doping selenium and cadmium, the energy band structure of SnTe was optimized to improve the power factor and thermoelectric optimization value 2017[40]
      AlloyingGe doped SnTe alloyThe local structure distortion and related ferroelectric instability of SnTe were adjusted by Ge doping, and the ultra-low lattice thermal conductivity was aquired to optimize the thermoelectric performance of SnTe2019[41]
    • Table 2. [in Chinese]

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      Table 2. [in Chinese]

      PhasesCrystal structuresSpace groupsLattice parameters
      α-SnTe Rhombohedral structureR3mα = 89.895°, a = 6.325 Å (1Å = 0.1 nm),
      β-SnTe Rock-salt Cubic structureFm3mα = 90°, a = 6.3268 Å
      γ-SnTe Orthorhombic structurePnmaα = 90°, a= 11.95 Å, b = 4.37 Å, c= 4.48 Å
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    Liyuan Song, Libin Tang, Qun Hao. Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211019

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    Paper Information

    Category: Frontier technology of infrared photodetector $ Materials and devices for low-dimensional infrared detection

    Received: Nov. 21, 2020

    Accepted: --

    Published Online: Mar. 24, 2021

    The Author Email: Tang Libin (scitang@163.com), Hao Qun (qhao@bit.edu.cn)

    DOI:10.3788/IRLA20211019

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