Chinese Physics B, Volume. 29, Issue 8, (2020)

Thermal stability of magnetron sputtering Ge–Ga–S films

Lei Niu1, Yimin Chen1,2、†, Xiang Shen1, and Tiefeng Xu1
Author Affiliations
  • 1Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 352, China
  • 2Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 31511, China
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    Figures & Tables(7)
    Fitting results of Ψ and Δ for fresh Ge27.4Ga7.3S65.3 film by the Cauchy model. Two test angles (65° and 75°) are employed here.
    Linear refractive index at 1550 nm wavelength for the as-deposited films as a function of MCN.
    The relationship between refractive index variation of Ge–Ga–S film and annealing time.
    Optical band-gap energy for as-deposited films as a function of MCN.
    Relationship between optical band-gap variation and annealing time of Ge–Ga–S films.
    Film thickness variation as a function of annealing time.
    • Table 1. Composition, MCN, and thickness of Ge–Ga–S deposited film.

      View table
      View in Article

      Table 1. Composition, MCN, and thickness of Ge–Ga–S deposited film.

      Film composition (Ge/Ga/S)Film MCNFilm thickness/nm
      20.0/6.5/74.52.46351
      22.5/8.1/69.42.53344
      27.4/7.3/65.32.62507
      30.4/8.4/61.22.69289
      33.1/7.9/59.02.74242
      38.5/8.4/53.12.85450
      43.6/6.8/49.62.94488
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    Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge–Ga–S films[J]. Chinese Physics B, 2020, 29(8):

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    Paper Information

    Received: Apr. 10, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Chen Yimin (shenxiang@nbu.edu.cn)

    DOI:10.1088/1674-1056/aba273

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