Chinese Physics B, Volume. 29, Issue 8, (2020)
Thermal stability of magnetron sputtering Ge–Ga–S films
Ge–Ga–S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge–Ga–S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge–Ga–S thin films with components close to the stoichiometric ratio can form the most Ga–S bonds and Ga–S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN = 2.62) film are the most stable. This is an important reference for thin film photonic devices.
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Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge–Ga–S films[J]. Chinese Physics B, 2020, 29(8):
Received: Apr. 10, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Chen Yimin (shenxiang@nbu.edu.cn)