InAs/GaAs quantum dots grown on different GaAs substrates with graded In<sub>x</sub>Ga<sub>1-x</sub>As strain-reducing layer

Shuping FEI; Zhongwei SHI; Lirong HUANG

doi:10.1007/s12200-010-0109-6

Frontiers of Optoelectronics, Volume. 3, Issue 3, 241(2010)

InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer

Shuping FEI, Zhongwei SHI, and Lirong HUANG^*

Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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Shuping FEI, Zhongwei SHI, Lirong HUANG. InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer[J]. Frontiers of Optoelectronics, 2010, 3(3): 241

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Paper Information

Received: May. 15, 2010

Accepted: Jun. 1, 2010

Published Online: Sep. 20, 2012

The Author Email: HUANG Lirong (hlr5649@163.com)

DOI:10.1007/s12200-010-0109-6

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