InAs/GaAs quantum dots grown on different GaAs substrates with graded In<sub>x</sub>Ga<sub>1-x</sub>As strain-reducing layer

Shuping FEI; Zhongwei SHI; Lirong HUANG

doi:10.1007/s12200-010-0109-6

Frontiers of Optoelectronics, Volume. 3, Issue 3, 241(2010)

InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer

Shuping FEI, Zhongwei SHI, and Lirong HUANG^*

Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

show less

Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded InxGa1-xAs SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded InxGa1 - xAs SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded InxGa1-xAs SRL was enlarged.

Keywords

gradient composition misoriented substrate quantum dots (QDs)strain-reducing layer (SRL)

Tools

Get Citation

Copy Citation Text

Shuping FEI, Zhongwei SHI, Lirong HUANG. InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer[J]. Frontiers of Optoelectronics, 2010, 3(3): 241

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Received: May. 15, 2010

Accepted: Jun. 1, 2010

Published Online: Sep. 20, 2012

The Author Email: HUANG Lirong (hlr5649@163.com)

DOI:10.1007/s12200-010-0109-6

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology