INFRARED, Volume. 43, Issue 1, 6(2022)

Study of Indium Bump Fabrication for Infrared Detector with 10 μm Pitch

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(3)

    [7] [7] She W L, Zhou L Q, Bruker Q B, et al. Manufacturing Application Study of CdZnTe Wafers Using Automated X-ray Metrology[C]. New York: Advanced Semiconductor Manufacturing Conference, 2018.

    [8] [8] Dahlin M J,O′Rourke E J. Advanced Focal Plane Array Systems for Next-Generation Scanning Remote Sensing Instrument[C]. SPIE, 2003, 4820: 406-417.

    [9] [9] Manissadjian A, Rubaldo L, Mollard L, et al. Improved IR Detectors to Swap Heavy Systems for SWaP[C]. SPIE, 2012, 8353: 835334.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Indium Bump Fabrication for Infrared Detector with 10 μm Pitch[J]. INFRARED, 2022, 43(1): 6

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    Paper Information

    Received: Aug. 18, 2021

    Accepted: --

    Published Online: Mar. 10, 2022

    The Author Email: (matao@cetc.com.cn)

    DOI:10.3969/j.issn.1672-8785.2022.01.002

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