Acta Photonica Sinica, Volume. 40, Issue 6, 852(2011)
Optical Properties of N-doped β-Ga2O3 Films Deposited by RF Magnetron Sputtering
The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands were observed and discussed.
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YAN Jin-liang, ZHANG Yi-jun, LI Qing-shan, QU Chong, ZHANG li-ying, LI Ting. Optical Properties of N-doped β-Ga2O3 Films Deposited by RF Magnetron Sputtering[J]. Acta Photonica Sinica, 2011, 40(6): 852
Received: Dec. 27, 2010
Accepted: --
Published Online: Jun. 24, 2011
The Author Email: Jin-liang YAN (yanjinliang@yahoo.cn)