Infrared and Laser Engineering, Volume. 51, Issue 12, 20220225(2022)

Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen

Hao Wu1,2,3, Yifan Zhu1,3,4, Qingfeng Ding1,2,3, Jinfeng Zhang1,3, Yang Shangguan1,3, Jiandong Sun1,3, and Hua Qin1,2,3
Author Affiliations
  • 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 3Key Laboratory of Nanodevices of Jiangsu Province, Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
  • 4School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
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    Figures & Tables(7)
    (a) Structure diagram of 340 GHz focal plane detector chip single pixel; (b) Coordinate definition of Pixels in FPA; (c) Equivalent circuit diagram of CMOS ROIC
    Schematic diagram of the low temperature test system
    Diagram of electrical signal transmission links in the cryogenic terahertz FPA system
    Variation of SNR of pixel (31,31) with the applied voltage at 300 K and 77 K
    NEP ratio of each pixel at 77 K and 300 K
    Noise ratio of each pixel at 77 K and 300 K
    (a) Ratio of the responsivity of each pixel at 77 K and 300 K; (b) Average increase in responsivity of adjacent pixels at 77 K and 300 K
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    Hao Wu, Yifan Zhu, Qingfeng Ding, Jinfeng Zhang, Yang Shangguan, Jiandong Sun, Hua Qin. Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen[J]. Infrared and Laser Engineering, 2022, 51(12): 20220225

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    Paper Information

    Category: Terahertz

    Received: Mar. 29, 2022

    Accepted: --

    Published Online: Jan. 10, 2023

    The Author Email:

    DOI:10.3788/IRLA20220225

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