Development of terahertz detectors with low dimensional materials (<i>Invited</i>)

Zhaoguo Liu; Huanli Zhou; Weidi He; Ning Zhao; Tong Zhang

doi:10.3788/IRLA20211015

Infrared and Laser Engineering, Volume. 50, Issue 1, 20211015(2021)

Development of terahertz detectors with low dimensional materials (Invited)

Zhaoguo Liu... Huanli Zhou, Weidi He, Ning Zhao and Tong Zhang |Show fewer author(s)

Joint International Research Laboratory of Information Display and Visualization, School of Electronics Science and Engineering, Southeast University, Nanjing 210096, China

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Figures & Tables(6)

Fig. 1. [in Chinese]

Fig. 2. [in Chinese]

Fig. 3. [in Chinese]

Fig. 4. [in Chinese]

Fig. 5. [in Chinese]

Table 1. [in Chinese]

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Table 1. [in Chinese]

Mechanism	Material	Frequency	Responsivity	Response time	NEP	Ref.
Bolometer	Graphene	2 THz	8 nA/W	50 ps	−	[22]
Bolometer	Graphene	0.15 THz	1×10¹⁰ V/W	<2.5 ns	0.2 fW/Hz^1/2	[23]
Bolometer	BP	0.3 THz	7.8 V/W	<1 ms	4 nW/Hz^1/2	[25]
PTE	Graphene	2.52 THz	>10 V/W	110 ps	1.1 nW/Hz^1/2	[29]
PTE	Graphene	2.52 THz	8.4 mV/W	5 μs	−	[30]
PTE	BP	0.3 THz	0.9 mV/W	20 ps	−	[31]
Plasma wave rectification	MoSe₂	0.29 THz	38 mV/W	−	6.6×10^-6 W/Hz^1/2	[36]
Plasma wave rectification	Graphene	0.6 THz	14 V/W	<30 μs	515 pW/Hz^1/2	[37]
Plasma wave rectification	Graphene	0.3 THz	1.2 V/W	<2.5 ms	2 nW/Hz^1/2	[38]
Plasma wave rectification	BP	0.26-0.38 THz	0.15 V/W	−	40 nW/Hz^1/2	[39]
Plasma wave rectification	Graphene	0.23-0.375 THz	0.25 V/W	<1.2 ms	80 nW/Hz^1/2	[42]
Hot carrier-assisted	Bi₂Se₃	0.3 THz	>10 V/W	60 μs	0.36 pW/Hz^1/2	[46]
Hot carrier-assisted	BP	0.15 THz	300 V/W	4 μs	1 nW/Hz^1/2	[47]
Hot carrier-assisted	TaSe₂	0.3 THz	40 A/W	−	<1 pW/Hz^1/2	[48]

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Zhaoguo Liu, Huanli Zhou, Weidi He, Ning Zhao, Tong Zhang. Development of terahertz detectors with low dimensional materials (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211015

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