Acta Photonica Sinica, Volume. 46, Issue 11, 1116001(2017)

Suppression of Stress and Cracks in the Epitaxy of AlN by MOCVD Through a Hexagonal BN Nucleation Layer

WU Qing-qing1...2,3,*, YAN Jian-chang1,2,3, ZHANG Liang1,2,3, CHEN Xiang1,2,3, WEI Tong-bo1,2,3, LI Yang1,2,3, LIU Zhi-qiang1,2,3, WEI Xue-cheng1,2,3, WANG Jun-xi1,2,3, and LI Jin-min1,23 |Show fewer author(s)
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    WU Qing-qing, YAN Jian-chang, ZHANG Liang, CHEN Xiang, WEI Tong-bo, LI Yang, LIU Zhi-qiang, WEI Xue-cheng, WANG Jun-xi, LI Jin-min. Suppression of Stress and Cracks in the Epitaxy of AlN by MOCVD Through a Hexagonal BN Nucleation Layer[J]. Acta Photonica Sinica, 2017, 46(11): 1116001

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    Paper Information

    Received: May. 23, 2017

    Accepted: --

    Published Online: Dec. 8, 2017

    The Author Email: Qing-qing WU (wuqq@semi.ac.cn)

    DOI:10.3788/gzxb20174611.1116001

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