Fig. 1. Two-dimensional model of InSb IRFPAs (local model). (a) Without isolation trough; (b) With V-shaped isolation trough added; (c) Bottom of V-shaped isolation trough is connected with preset crack; (d) Preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm

Fig. 2. Coefficients of thermal expansion (CTE) depending on temperature for InSb, underfill and Silicon-ROIC

Fig. 3. (a) In-plane normal stress distribution of InSb front surface; (b) In-plane normal stress distribution in region of isolation trough existed

Fig. 4. Energy release rate of the preset crack connected with the bottom of V-shaped isolation trough

Fig. 5. Comparison of energy release rate between the preset crack connected directly with the bottom of V-shaped isolation trough and the preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm