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Chinese Journal of Quantum Electronics, Volume. 31, Issue 1, 107(2014)

Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance

Da-qing ZHANG1,*... Guo-bin LI2 and Chang-shui CHEN2 |Show fewer author(s)
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    ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance[J]. Chinese Journal of Quantum Electronics, 2014, 31(1): 107

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    Received: May. 3, 2013

    Accepted: --

    Published Online: Feb. 26, 2014

    The Author Email: Da-qing ZHANG (zhangdq-nrist@163.com)

    DOI:10.3969/j.issn.1007-5461. 2014.01.016

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology