Fig. 1. MIM-MAs infrastructure and related performance：（a） Schematic of the proposed structure of MIM-MAs；（b） Optical parameters of AlN and Mo；（c） Design the schematic diagram of the absorption，reflectivity and transmittance curves of the MAs structure

Fig. 2. Mapping of electric and magnetic field distribution at MAs absorption peak：（a） x-y plane and（b） x-z plane electric field distribution；（c） x-y plane and（d） x-z plane magnetic field distribution；（e） x-y plane and（f） x-z plane power density distribution

Fig. 3. The proposed equivalent circuit model structure：（a） Schematic diagram of the RLC equivalent circuit model for MIM-MAs；（b） Real and imaginary parts of the relative impedance of the equivalent circuit model

Fig. 4. Comparison of RLC circuit model prediction results and FDTD simulation results： At p=3.6 µm，（a） resonant wavelength and（c） FWHM for different values of w are as follows； At w=2.6 µm，（b） resonant wavelength and（d） FWHM for different values of p are as follows

Fig. 5. Preparation by MIM-MAs process：（a） Process steps to fabrication MAs；（b） SEM image of the fabricated MAs；（c） Tested MAs absorption response（orange points） versus the absorption response predicted by the RLC equivalent circuit model（blue points）