Chinese Physics B, Volume. 29, Issue 9, (2020)
Review of resistive switching mechanisms for memristive neuromorphic devices
Fig. 1. Schematic operation principle of an electrochemical metallization cell in conjunction with the typical
Fig. 2. The filament geometry in the device of Ag/Ag2S/Pt, including the density and diameter of the dendritic branches, can be tuned independently through controlling the compliance current level (
Fig. 3.
Fig. 4. Atomic structure of the conductive filaments with Magnéli structures observed in VCM cells. (a) High-resolution TEM image of a Ti4O7 nanofilament in the device of Pt/TiO2/Pt with unipolar resistive switching behavior. Reproduced with permission.[
Fig. 5. Amorphous conductive filaments in VCM cells based on oxides. (a) TEM, EELS, and the physical switching mechanism for the Au/Ta2O5/Au device. Reproduced with permission.[
Fig. 6. Asymmetric structured memristive device with a reservoir layer of VO and the switching mechanism of the Pt/Ta2O5−
Fig. 7. Switching polarity determined by the dynamic oxygen migration process. (a) Two types of switching properties in the Au/Sr2TiO4/Nb:SrTiO3 (STO) device; the device is schematically shown in the inset. Reproduced with permission.[
Fig. 8. Resistive switching induced by electron trapping/detrapping process. (a)
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Rui Yang. Review of resistive switching mechanisms for memristive neuromorphic devices[J]. Chinese Physics B, 2020, 29(9):
Category: Physics in neuromorphic devices
Received: May. 14, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Yang Rui (yangrui@hust.edu.cn)