Infrared and Laser Engineering, Volume. 52, Issue 6, 20230192(2023)

Research progress of laser protection technology for optoelectronic imaging system (invited)

Yangliang Li1,2, Qing Ye1,2、*, Yunlong Wu1,2, Ke Sun1,2, Hao Zhang1,2, and Xiaoquan Sun1,2
Author Affiliations
  • 1State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei 230037, China
  • 2Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China
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    Figures & Tables(15)
    Block diagram of laser protection technology
    (a) Gaussian spatial profile of pumping pulse; (b) Reflectivity during the phase transformation; (c) Time resolved evolutions of the reflectivity for three different positions on the sample, corresponding to local fluences of (c1) 7 mJ/cm2, (c2) 15 mJ/cm2, and (c3) 25 mJ/cm2
    Response time of photoinduced transition as a function of pulse width, which ranges from 1.5 ps to 15 fs
    Schematic diagram of variable temperature Z-scan device
    Process for solution mixing and film synthesis
    (a) Reflectance and (b) transmittance spectra of the VO2 film at selected temperatures during the heating process
    Electrical and optical properties of VO2 thin film
    Transmittance spectra of VO2-SiO2 composite films upon increasing Si/V molar ratios in the wavelength ranges from 250 nm to 2500 nm. Solid line: 30 ℃; Dash line: 100 ℃
    (a) Simulated and (b) experimental transmittance of the limiter in the on and off-states. The inset in (b) is an SEM image of the fabricated device
    Diagram of the optical system
    Equivalent schematic of the composite imaging system
    Laser dazzling protection method combining digital micromirror device with the wavelength multiplexing technique
    (a) Optical layout diagram and (b) transmittance function of three-channel band compensation imaging method
    (a) Optical layout diagram and (b) transmittance function of dual-channel band compensation imaging method
    • Table 1. Studies on response time of photoinduced transition

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      Table 1. Studies on response time of photoinduced transition

      Sample propertySynthesis methodTest conditionResponse timeReference
      32 nm-thick VO2 thin film Low-temperature processPulse width: 450-550 fs Energy density: 3.7 mJ/cm2Wavelength: 780 nm <500 fs[16]
      0.2 μm-thick VO2 thin film Reaction evaporation deposition and annealingBiasing temperature: 52 ℃ Pulse width: 50 ns Energy density: 150 mJ/cm2<50 ns[17]
      0.2 μm-thick VO2 thin film -Pulse width: 50 fs Energy density: 7-25 mJ/cm2Wavelength: 800 nm 50 ps-100 fs[18]
      VO2-Si3N4 structures Chemically etchingPulse width: 100 fs Energy density: 50 mJ/cm2Wavelength: 790 nm <500 fs[19]
      VO2 microcrystals Vapour transportPulse width: ~45 fs Energy density: 3.3 mJ/cm2Wavelength: 800 nm Femtosecond timescale[20]
      25 nm-thick VO2 thin film Pulsed laser depositionPulse width: 4.9 fs Pulse energy: ~100 mJ/cm2Wavelength: 400-1000 nm (26±6) fs[21]
      75 nm-thick VO2 thin film Pulsed laser deposition and annealingWavelength: 800 nm200 fs[22]
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    Yangliang Li, Qing Ye, Yunlong Wu, Ke Sun, Hao Zhang, Xiaoquan Sun. Research progress of laser protection technology for optoelectronic imaging system (invited)[J]. Infrared and Laser Engineering, 2023, 52(6): 20230192

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    Paper Information

    Category: Reivew

    Received: Mar. 31, 2023

    Accepted: --

    Published Online: Jul. 26, 2023

    The Author Email: Ye Qing (yeqing18@nudt.edu.cn)

    DOI:10.3788/IRLA20230192

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