Infrared and Laser Engineering, Volume. 52, Issue 6, 20230192(2023)
Research progress of laser protection technology for optoelectronic imaging system (invited)
Fig. 2. (a) Gaussian spatial profile of pumping pulse; (b) Reflectivity during the phase transformation; (c) Time resolved evolutions of the reflectivity for three different positions on the sample, corresponding to local fluences of (c1) 7 mJ/cm2, (c2) 15 mJ/cm2, and (c3) 25 mJ/cm2
Fig. 3. Response time of photoinduced transition as a function of pulse width, which ranges from 1.5 ps to 15 fs
Fig. 6. (a) Reflectance and (b) transmittance spectra of the VO2 film at selected temperatures during the heating process
Fig. 8. Transmittance spectra of VO2-SiO2 composite films upon increasing Si/V molar ratios in the wavelength ranges from 250 nm to 2500 nm. Solid line: 30 ℃; Dash line: 100 ℃
Fig. 9. (a) Simulated and (b) experimental transmittance of the limiter in the on and off-states. The inset in (b) is an SEM image of the fabricated device
Fig. 12. Laser dazzling protection method combining digital micromirror device with the wavelength multiplexing technique
Fig. 13. (a) Optical layout diagram and (b) transmittance function of three-channel band compensation imaging method
Fig. 14. (a) Optical layout diagram and (b) transmittance function of dual-channel band compensation imaging method
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Yangliang Li, Qing Ye, Yunlong Wu, Ke Sun, Hao Zhang, Xiaoquan Sun. Research progress of laser protection technology for optoelectronic imaging system (invited)[J]. Infrared and Laser Engineering, 2023, 52(6): 20230192
Category: Reivew
Received: Mar. 31, 2023
Accepted: --
Published Online: Jul. 26, 2023
The Author Email: Ye Qing (yeqing18@nudt.edu.cn)