Acta Optica Sinica, Volume. 44, Issue 8, 0814002(2024)
976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle
Figures & Tables(9)
Fig. 1. Refractive index and normalized optical field distribution of diode laser epitaxial structure
Fig. 6. Horizontal far-field intensity distribution of ridge diode laser under different injection currents
Fig. 7. P-I characteristics of ridge diode laser at different operating temperatures
Fig. 8. Horizontal far-field intensity distribution of ridge diode laser at different temperatures
Table 1. Epitaxial structure parameters of ridge diode laser
View tableTable 1. Epitaxial structure parameters of ridge diode laser
Layer order Layer Material Thickness /μm Doped concentration /cm-3 9 Ohmic contact GaAs 0.2 C: 1×1020 8 Upper confinement Al0.4GaAs 0.7 C: 1×1018 7 Upper waveguide Al0.15GaAs 0.7 Undoped 6 Upper transition Al0.1GaAs 0.04 Undoped 5 Active region InGaAs/GaAsP - Undoped 4 Lower transition Al0.1GaAs 0.04 Undoped 3 Lower waveguide Al0.15GaAs 1.6 Undoped 2 Lower confinement Al0.4GaAs 0.8 Si: 5×1017 1 Buffer layer GaAs 0.5 Si: 1×1018 0 Substrate GaAs - -
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Zhennuo Wang, Li Zhong, Deshuai Zhang, Suping Liu, Zhipeng Pan, Jinyuan Chang, Tianjiang He, Xiaoyu Ma. 976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle[J]. Acta Optica Sinica, 2024, 44(8): 0814002
Paper Information
Category: Lasers and Laser Optics
Received: Dec. 11, 2023
Accepted: Feb. 2, 2024
Published Online: Apr. 18, 2024
The Author Email: Zhong Li (zhongli@semi.ac.cn), Zhang Deshuai (zhangdeshuai@semi.ac.cn)
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