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Photonics Research, Volume. 9, Issue 7, 1369(2021)

Monolithic and single-functional-unit level integration of electronic and photonic elements: FET-LET hybrid 6T SRAM

Antardipan Pal1, Yong Zhang1、*, and Dennis D. Yau2
Author Affiliations
  • 1Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA
  • 2Sinai Green Lab, Cupertino, California 95014, USA
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    Figures&Tables (6)
    Equations (13)
    References (57)
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    Figures & Tables(6)
    6T SRAM cell.

    Fig. 1. 6T SRAM cell.

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    Schematic of a light-effect transistor (LET). (a) Output and (b) transfer characteristics of a prototype LET based on a CdSe nanowire.

    Fig. 2. Schematic of a light-effect transistor (LET). (a) Output and (b) transfer characteristics of a prototype LET based on a CdSe nanowire.

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    Prototype hybrid 6T SRAM cell with LET access.

    Fig. 3. Prototype hybrid 6T SRAM cell with LET access.

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    Read and write delay and energy for various SRAM arrays with FET, LET, and ballistic LET access devices. (a) Read delay, (b) read energy, (c) write delay, (d) write energy. The curves with LETs and ballistic LETs are indistinguishable.

    Fig. 4. Read and write delay and energy for various SRAM arrays with FET, LET, and ballistic LET access devices. (a) Read delay, (b) read energy, (c) write delay, (d) write energy. The curves with LETs and ballistic LETs are indistinguishable.

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    Prototype hybrid 6T array.

    Fig. 5. Prototype hybrid 6T array.

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    • Table 1. Comparison of the Performance of 4 kB and 16 kB SRAM Arrays with FET, LET, and Ballistic LET Access Devices

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      Table 1. Comparison of the Performance of 4 kB and 16 kB SRAM Arrays with FET, LET, and Ballistic LET Access Devices

      4 kB SRAM Array16 kB SRAM Array
       FET Access DevicesLET Access DevicesBallistic LET Access DevicesFET Access DevicesLET Access DevicesBallistic LET Access Devices
      Read delay (ps)8461871871690374374
      Write delay (ps)7903033031580598598
      Read energy (fJ)20.10.90.8940.21.81.77
      Write energy (fJ)307.077.0659.814.114.1
      Estimated area (μm2)3.67×1035.0×1032.35×1031.47×1042.0×1049.40×103
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    Antardipan Pal, Yong Zhang, Dennis D. Yau. Monolithic and single-functional-unit level integration of electronic and photonic elements: FET-LET hybrid 6T SRAM[J]. Photonics Research, 2021, 9(7): 1369

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    Paper Information

    Category: Integrated Optics

    Received: Jan. 27, 2021

    Accepted: May. 4, 2021

    Published Online: Jul. 14, 2021

    The Author Email: Yong Zhang (yong.zhang@uncc.edu)

    DOI:10.1364/PRJ.420887

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology