High Power Laser and Particle Beams, Volume. 33, Issue 9, 091001(2021)

Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

Lin’an He1...2, Kun Zhou1,2, Liang Zhang1,2, Yi Li1,2, Weichuan Du1,2, Yao Hu1,2, Songxin Gao1,2, and Chun Tang12 |Show fewer author(s)
Author Affiliations
  • 1The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China
  • 2Institute of Applied Electronics, CAEP, Mianyang 621900, China
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    Figures & Tables(5)
    Refractive index and mode distribution diagram of 780 nm semiconductor laser
    Power and wall-plug efficiency curves of 780 nm semiconductor laser
    Far field and near field of 780 nm semiconductor laser
    Power, conversion efficiency and spectrum curves of the 780 nm semiconductor laser before and after mode locked by VBG
    Spectrum curves of the 780 nm semiconductor laser at different VBG heating current
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    Lin’an He, Kun Zhou, Liang Zhang, Yi Li, Weichuan Du, Yao Hu, Songxin Gao, Chun Tang. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33(9): 091001

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    Paper Information

    Category: High Power Laser Physics and Technology

    Received: Mar. 21, 2021

    Accepted: --

    Published Online: Oct. 9, 2021

    The Author Email:

    DOI:10.11884/HPLPB202133.210099

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