Chinese Journal of Quantum Electronics, Volume. 19, Issue 2, 155(2002)
Analytical Study of the Photovoltaic Transient Response
References(3)
[1] [1] Huang Weiqi et al.Effect of the transient response in Si/Ge parallelizing PN junction [J].J.Mater.Sci.Technol..1999,15(4): 383
[2] [2] Pedersen E V et al.Bimodal-height distrution of seif-assembled germaniumislands growu on Si Ge substrates [J].Thin Solid Films,1998,321:92～97
[3] [3] Larsen A N et al.Nanostructure of Ge deposited on Si(001) [J].Thin Solid Films,1999,388:165
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[in Chinese], [in Chinese], [in Chinese]. Analytical Study of the Photovoltaic Transient Response[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 155
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