[1] [1] MILLS A. Compound semiconductors on silicon［J］. III-Vs Review, 2002, 15(4): 30-35.

[2] [2] TAGUCHI T. Present status of white LED lighting technologyies in Japan［J］. Journal of Light & Visual Enviroment, 2003, 27(33): 131-139.

[3] [3] NAKAMURA S, FASOL G. The blue laser diode: GaN based light emitters and lasers［M］.Berlin: Springer, 1997.

[4] [4] LI Pan-lai, YANG Zhi-ping, WANG Zhi-jun, et al. Spectrum characteristics of Sr3SiO5∶Eu2+ phosphor［J］. Acta Photonica Sinica, 2008, 37(10):2001-2004.

[5] [5] YAMADA M, NAITOU T, IZUMO K, et al. Red-enhanced white-light-emitting diode using a new red phosphor［J］. Japanese Journal of Applied Physics, 2003, 42(1A-B ): L20-L23.

[6] [6] SHEU J K, CHANG S J, KUO C H, et al. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors［J］. IEEE Photonics Technology Letters, 2003, 15(1): 18-20.

[7] [7] OZDEN I, MAKARONA E, NURMIKKO A V, et al. A dual-wavelength indium gallium nitride quantum well light emitting diode［J］. Applied Physics Letters, 2001, 79(16): 2532-2534.

[8] [8] CHEN C H, CHANG S J, SU Y K. InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes［J］. Physica Status Solidi (c), 2003, (7): 2257-2260.

[9] [9] WANG X H, JIA H Q, GUO L W, et al. White light-emitting diodes based on a single InGaN emission layer［J］. Applied. Physics Letters, 2007, 91(16):1912-1914.

[10] [10] WANG X H, GUO L W, JIA H Q, et al. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer［J］. Applied Physics Letters, 2009, 94(11):1913-1915.

[11] [11] MIRHOSSEINI R, SCHUBERT M F, CHHAJED S, et al. Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions［J］. Optics Express, 2009, 17(13):10806- 10813.