Infrared and Laser Engineering, Volume. 51, Issue 4, 20210399(2022)
Analysis of dark current characteristic of InAs/GaSb superlattice longwave infrared detectors
Fig. 1. Energy band alignment of pN hetero-junciton. (a) Without contact; (b) With contact
Fig. 2. Schematic diagram of superlattice IR detector structure and its energy band alignment
Fig. 4. The relationship between the inverse product of resistances with area at zero bias with perimeter/area of detectors
Fig. 5. Measurement and fitting results of dark current of photodetector with 60 μm mesa size
Fig. 6. G-R current and trap assisted tunnel current of photodetector with different doping density of absorption layer
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Junbin Li, Aimin Liu, Zhi Jiang, Jin Yang, Wen Yang, Jincheng Kong, Dongsheng Li, Yanhui Li, Xuchang Zhou. Analysis of dark current characteristic of InAs/GaSb superlattice longwave infrared detectors[J]. Infrared and Laser Engineering, 2022, 51(4): 20210399
Category: Special issue—Infrared detection and recognition technology under superspeed flow field
Received: Dec. 25, 2021
Accepted: --
Published Online: May. 18, 2022
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