Chinese Physics B, Volume. 29, Issue 9, (2020)
Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy
Fig. 1. (a) The XRD pattern of the Ga2O3 thin film on
Fig. 2. Cross-sectional SEM image of the
Fig. 3. The transmission spectrum of the Ga2O3 thin film on
Fig. 4. (a) The XRD pattern and (b) transmittance spectra of the SnO thin film on glass. (c) The XRD pattern of the NiO thin film on glass, (d) the transmittance spectra of the NiO thin film on sapphire. The insets of (c) and (d) show their optical bandgaps.
Fig. 5. High resolution XPS spectra of sample 1, it shows the Ga 2p CL and VBM.
Fig. 6. High resolution XPS spectra for (a) sample 2 and (b) sample 3. (c) Schematic diagram for band alignment of the SnO/
Fig. 7. High resolution XPS spectra for (a) sample 4 and (b) sample 5. (c) Schematic diagram for band alignment of the NiO/
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Chang Rao, Zeyuan Fei, Weiqu Chen, Zimin Chen, Xing Lu, Gang Wang, Xinzhong Wang, Jun Liang, Yanli Pei. Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 25, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Pei Yanli (peiyanli@mail.sysu.edu.cn)