High Power Laser Science and Engineering, Volume. 10, Issue 6, 06000e35(2022)
High laser damage threshold reflective optically addressed liquid crystal light valve based on gallium nitride conductive electrodes
Figures & Tables(13)
Fig. 2. The relationship between the driving voltage on the liquid crystal cell and the reflectivity of the OALCLV. Only the loss of the liquid crystal layer is considered; the other layers are considered as ideal materials.
Fig. 3. The relationship between the ratio of the voltage of the liquid crystal layer and the total voltage and the driving frequency in the (a) off-state and (b) the on-state.
Fig. 4. Schematic of the experimental facility used for the GaN damage resistance test.
Fig. 5. The laser damage data of the GaN single crystal. The experimental data of the damage probability are represented by discrete points, while the fitting data are represented by the linear fitting line.
Fig. 6. The damage spot micrograph of the GaN single crystal specimen (the measuring scale is shown in the figure).
Fig. 7. The image response of full black input (a) and full white input (b) of the OALCLV.
Fig. 8. The test result (rising curve (a) and declining curve (b)) of the response speed of the OALCLV.
Fig. 9. The image response test result of the reflective OALCLV: input ((a), (c)) and output ((b), (d)).
Table 1. The parameters in the simulation of the HFE mode reflective liquid crystal cell.
View tableView in ArticleTable 1. The parameters in the simulation of the HFE mode reflective liquid crystal cell.
Conditions Value Wavelength (λ) 1053 nm Ordinary refractive index ( ${n}_{\mathrm{o}}$ 1.517 Extraordinary refractive index ( ${n}_\mathrm{e}$ 1.741 Thickness of the cell 4.6 μm Off-state reflectivity 1%
Table 2. The parameters of the liquid crystal cell in
Equation (1) .View tableView in ArticleTable 2. The parameters of the liquid crystal cell in
Equation (1) .Parameter Value RLC 1.15×106 Ω[ 18 ]CLC 1.286×10–8 F R0 1.25×1012 Ω[ 18 ]CBSO 1.98×10–10 F[ 18 ]R1 6×106 Ω[ 18 ]C1 1.2×10–10 F[ 18 ]R $_\Phi$ 2.14×106 Ω R $_\Phi$ 1.07×108 Ω
Table 3. The parameters in the damage resistance test of the GaN single crystal.
View tableView in ArticleTable 3. The parameters in the damage resistance test of the GaN single crystal.
Parameter Value Wavelength 1053 nm Pulse width 12 ns Test type 1-on-1 Effective area of the spot 0.1 mm2 Total damage sites 70
Table 4. The experimental setup and result of the reflective OALCLV.
View tableView in ArticleTable 4. The experimental setup and result of the reflective OALCLV.
Conditions/results Value Readout wavelength 1053 nm Input pulse width 12 ns Wavelength of the address light 470 nm Driving voltage 27 V Driving frequency 208 Hz Maximum reflectivity 55% Average maximum on–off ratio ~55 Response speed ~100 ms (up/down)
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Zhibo Xing, Wei Fan, Dajie Huang, He Cheng, Tongyao Du. High laser damage threshold reflective optically addressed liquid crystal light valve based on gallium nitride conductive electrodes[J]. High Power Laser Science and Engineering, 2022, 10(6): 06000e35
Paper Information
Category: Research Articles
Received: Mar. 7, 2022
Accepted: Aug. 18, 2022
Published Online: Dec. 22, 2022
The Author Email: Wei Fan (fanweil@siom.ac.cn)
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