Journal of Synthetic Crystals, Volume. 49, Issue 4, 570(2020)
Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal
[2] [2] Anikin M, Madar R. Temperature gradient controlled SiC crystal growth[J].Mater. Sci. Eng.B,1997,46:278-286.
[3] [3] Yakimova R, Syvajarvi M, Iakimov T, et al. Polytype stability in seeded sublimation growth of 4H-SiC boubles[J].Journal of Crystal Growth,2000,217(3):255-262.
[4] [4] Avrov D D, Bulatov A V, Dorozhkin S I, et al. Defect formation in silicon carbide large-scale ingots grown by sublimation technique[J].Journal of Crystal Growth,2005,275:4,85-489.
[5] [5] Dmitriev V, Rendakova S, Kuznetsov N, et al. Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density[J].Mater. Sci. Eng. B,1999,61-62:446-449.
[6] [6] Cherednichenko D I, Drachev R V, Khlebnikov I, et al. Thermal stress as the major factor of defect generation in SiC during PVT growth[J].Materials Research Society,2003,742:1812-1816.
[7] [7] Zhang Z B, Lu J, Chen Q S. Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method[J].Acta Mechanica Sinica,2006,22:40-45.
[8] [8] Herro Z G, Epelbaum B M, Bickermann M, et al. Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient[J].Journal of Crystal Growth,2004,262:105-112.
[10] [10] Nakabayashi M, Fujimoto T, Katsuno M, et al. Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities[J].Materials Science Forum,2009,600-603:3-6.
Get Citation
Copy Citation Text
LIU Bing, PU Hongbin, ZHAO Ran, ZHAO Ziqiang, BAO Huiqiang, LI Longyuan, LI Jin, LIU Sujuan. Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(4): 570
Category:
Received: --
Accepted: --
Published Online: Jun. 15, 2020
The Author Email: Hongbin PU (puhongbin@xaut.edu.cn)
CSTR:32186.14.