[2] [2] XIA Y,YANG P D,SUN Y G.et al.One-dimensional nanostructures:synthesis,characterization and application[J].Adv Mater,2003,15(5):353～389.

[4] [4] LEENAERS A J G,de BOER G D K.Applications of glancing incidence X-Ray analysis[J].X-Ray Spectrometry,1997,26:115～121.

[5] [5] SLOUTSKIN E,GANG O,KRAACK H,et al.Demixing transition in a quasi-two-dimensional surface-frozen layers[J].Phys Rev Lett,2002,89 (6):065501～065504.

[6] [6] STOEV K N,SAKURAI K,REVIEW on grazing incidence X-Ray spectrometry and reflectometry[J].Spectrochimica Acta Part B,1999,54:41～82.

[7] [7] ZHONG Z Y,AMBACHER O,LINK H A,et al.Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by X-ray refelectivity and diffraction[J].Appl Phys Lett,2002,80(19):3521～3523.

[8] [8] SUBRAMANYAM T K,SRINIVASULE N B,UTHANNA S.Characterization of DC reactive magnetron sputtered ZnO films prepared at different Oxygen pressures[J].Phys Stat Sol(A),1999,173(2):425-436.

[10] [10] OHKUBO I,OHTOMO A,OHNISHI T,et al.In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire[J].Surface Science,1999,443(1-2):L1043-L1048.

[11] [11] VISPUTE R D,TALYANSKY V,TRAJANOVIC Z,et al.High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ-Ⅴ nitrides[J].Appl Phys Lett,1997,70(20):2735～2737.

[12] [12] KIM K K,SONG J H,JUNG H J,et al.Photoluminescence and heteroepitaxy of ZnO on sapphire sbustrate(0001) grown by RF magnetron sputtering[J].J Vac Sci Technol A,2000,18(6):2864～2868.

[13] [13] CHEN Y F,BAGNALL D M,YAO T.ZnO as a novel photonic material for the UV region[J].Mat Sci Eng B,2000,75(2-3):190-198.

[14] [14] BELLINGERI E,MARRE D,PALLECCHI I,et al.High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation[J].Appl Phys Lett,2005,86(1):012109-1～012109-3.