Infrared and Laser Engineering, Volume. 53, Issue 4, 20240116(2024)
Silicon based hot electron short wave infrared detection technology (cover paper·invited)
Figures & Tables(17)
Fig. 1. Schematic diagram of the formation principle of metal-silicon Schottky junction. (a) Energy band diagram before the contact between metal and silicon; (b) Energy band diagram of Schottky junction after the contact between metal and N-type silicon; (c) Energy band diagram of Schottky junction after the contact between metal and P-type silicon; (d) Typical current-voltage characteristic curve of Schottky junction
Fig. 2. The process of energy transfer and loss in the three stages of hot electron generation, transport, and injection
Fig. 3. Effect of metal material type on initial energy distribution of hot electrons
Fig. 4. (a) The scattering process and time scale of hot electrons; (b) the relationship between the mean free path of hot electrons scattered by electrons and phonons and the energy of hot electron
Fig. 5. The conical distribution of the momentum of hot electrons that can be injected into silicon
Fig. 6. (a), (b) Schematic diagram of a photodetector based on a one - and two-dimensional metamaterial perfect absorber; (b), (c) and (e), (f) are the absorption and response curves corresponding to the detectors in figure (a) and (b), respectively
Fig. 7. (a) Schematic diagram of the Tamm plasmon enhanced thermal electron detector; (b) Comparison diagram of its responsiveness with the grating coupled enhanced thermionic detector
Fig. 8. (a) Schematic diagram of a random structure enhanced thermionic detector; (b) Absorption spectra of Au/SiNH structures prepared at different annealing temperatures; (c) The responsiveness of Au/SiNH devices with different Au coating thicknesses; (d) Responsiveness under different lighting modes; (e) Scanning electron microscopy (SEM) images of Au/SiNH prepared by annealing at different temperatures
Fig. 9. The frequency variation of the percentage of heat loss, geometrical assist, phonon assist and direct transition to the total absorbed energy in (a) semi-infinite surface, (b) 40 nm, (c) 20 nm and (d) 10 nm diameter spheres
Fig. 10. (a) Structure diagram of silver nanorod array detector; (b) The initial position of hot electron generation in the detector
Fig. 11. (a) The channel antenna structure detector in the front light (left) back light (right) detection diagram; (b) Response curves of gold-silicon microcone detectors in front and back irradiation modes
Fig. 12. (a) The proportion of three main thermoelectronic loss mechanisms of Au and Pt Schottky detectors at 1510 nm; (b) Quantitative comparison of the external quantum efficiency of six metal Schottky detectors with a thickness of 20 nm; (c) The five metals Cu, Ni, Ag, Au, Pt pair absorption rate, injection probability, mean free path and quantum efficiency
Fig. 13. (a) From left to right, the band structure of aluminum, silver, copper and gold and the relationship between the hot carrier energy distribution and the incident photon energy are shown (The above figure shows the position of the possible transition of hot electrons in the energy band, and the following figure shows the energy distribution of hot carriers); (b) From left to right are the directional distributions of energy and momentum for aluminum, silver, copper and gold (The above figure shows the direction distribution of energy and momentum of hot electrons, and the following figure shows the direction distribution of energy and momentum of holes)
Fig. 14. The relationship between the energy distribution of (a) aluminum, (b) silver, (c) copper and (d) gold and the energy of incident photons(Among them, the above figure shows the position of the possible transition of hot electrons in the energy band, and the following figure shows the energy distribution of hot carriers)
Fig. 15. (a) Metal/TiO2−
Fig. 16. (a) Nanowire structures made of silicon with gold-silicon Schottky junction; (b) Schematic diagram of band structure at the silicon nanowire/gold antenna interface
Table 1. Summary of silicon-based hot electron shortwave infrared detectors in recent years
View tableView in ArticleTable 1. Summary of silicon-based hot electron shortwave infrared detectors in recent years
Device type/ Enhancement strategy Responsivity Dark current/ Dark current density Detectivity/ Jones NEP/ W·Hz−1/2 Year Au film on Si nanobowl[ 35 ]Hot electron generation 0.34 mA·W−1@1300 nm 0.29 mA·W−1@1500 nm 2.5×10−7 A None 8.3×10−10 2021 Disordered Au/ Si nanoneedles[ 50 ]Hot electron generation 2.56 mA·W−1@1300 nm 0.33 mA·W−1@1500 nm 4×10−10 A None 4.4×10−12 @1300 nm 2023 Au antennas/Ti/Si[ 51 ]Hot electron generation 10 μA·W−1@1250 nm 3 μA·W−1@1550 nm None None None 2011 Deep-trench/thin Au/ Si antenna[ 52 ]Hot electron generation 3 mA·W−1@1300 nm 1.25 mA·W−1@1400 nm 0.5 mA·W−1@1550 nm 8.7×10−9 A·cm−2 5.68 ×1010 2.37 ×1010 9.47 ×109 None 2014 Metamaterial Au/Si[ 53 ]Hot electron generation 3 mA·W−1@1300 nm None None None 2014 Two distributed Bragg reflectors (DBRs) Al2O3/TiO2 Al2O3/TiO2/Au[ 54 ]Hot electron generation 27 mA·W−1@813 nm None None None 2021 Disordered Au Si NHs[ 55 ]Hot electron generation 1.5-13 mA·W−1 @1100-1500 nm 1×10−6 A None 4.75×10−11- 3.77×10−10 2018 Au grating/Si[ 16 ]Hot electron generation 0.6 mA·W−1@1460 nm None None None 2013 Material-embedded Trenchlike thin Au/Si[ 61 ]Hot electron generation 5854 nA·mW−1@1310 nm 693 nA·mW−1@1550 nm None None None 2019 Au/Si pyramid [ 22 ]Hot electron generation 5.2 mA·W−1@1200 nm None None None 2020 Au NWs embedded in Si[ 66 ]Hot electron injection 0.065 mA·W−1@1500 nm 1×10−9 A 3.63×106 2.75×10−10 2013 TiN/thin Au stripe embedded in Si[ 68 ]Hot electron injection Exceed 1.0 A·W−1@1550 nm None None None 2016 Thin film TiN/p-Si[ 69 ]Hot electron injection 1 mA·W−1@1250 nm 3×10−10 A 6.12×108 9.8×10−12 2019 Waveguide-based Al/Si[ 70 ]Hot electron injection 12.5 mA·W−1 @1550 nm (0.1 V) 3×10−8 A (0.1 V) None 7.84×10−12 2012 Metasurface Au/Si[ 73 ]Hot electron transfer and injection 94.5 mA·W−1 @1150 nm (1.5 V) 1.45×10−7 A·cm−2 4.38 ×1011 None 2019 Partially metalizing the pyramid Al/SiO2/Si[ 34 ]Dark current suppression None Reduce by 2 times None None 2021 Graphene/Al2O3/Ge[ 74 ]Dark current suppression 1.2 A·W−1@1550 nm (2 V) 1×10−6 A None None 2021 Interface engineering assisted graphene/Si[ 75 ]Dark current suppression None@890 nm 7.2×10−10 A 9.3×1012 1.8×10−12 2022 ITO/ Thin Ag/n-Si[ 76 ]Dark current suppression 0.05 A·W−1@1550 nm (2 V) 2.4×10−6 A/cm2 (−1 V) None None 2018 Thin ITO/Au/ Au Nanoparticle/n-Si[ 43 ]Dark current suppression 2.82 mA·W−1@1310 nm (−1 V) 4.4×10−5 A/cm2 (−1 V) None None 2022 Graphene with polyethyleneimine/p-Si[ 77 ]Dark current suppression 0.3 A·W−1@850 nm 2.4×10−10 A 5.9×1010 None 2021 NanoalloysAu40Ag60/Si[ 78 ]Hot electron transfer 7.3 mA·W−1@1310 nm 1.9 mA·W−1@1550 nm None None None 2024 Au/crystallized Ge/Si[ 79 ]Hot electron injection 0.71 A·W−1@1310 nm 0.64 A·W−1@1550 nm (1 V) None None None 2022 TalrTe4/Si[ 80 ]Hot electron transfer 14 mA·W−1@1310 nm 1.32 mA·W−1@1550 nm None None None 2022 Mo2C/MoGeSiN4/Si[ 81 ]Hot electron transfer 176 mA·W−1@1550 nm None None None 2022
Tools
Get Citation
Copy Citation Text
Xinhao Wen, Yu Jia, Leyong Yu, Li Shao, Hui Chen, Chaojie Xia, Linlong Tang, Haofei Shi. Silicon based hot electron short wave infrared detection technology (cover paper·invited)[J]. Infrared and Laser Engineering, 2024, 53(4): 20240116
Paper Information
Category:
Received: Mar. 14, 2024
Accepted: --
Published Online: Jun. 21, 2024
The Author Email: Shi Haofei (shi@cigit.ac.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20