Acta Photonica Sinica, Volume. 52, Issue 10, 1052420(2023)

Preparation of As2S3 Chalcogenide Ridge Waveguide Based on AZ5214 Photoprotective Layer

Lei SHANG, Liner ZOU*, Xifei YANG, Le LI, and Yun SHEN
Author Affiliations
  • School of Physics and Materials Science,Nanchang University,Nanchang 330031,China
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    Figures & Tables(9)
    Surface roughness diagram before and after annealing of As2S3 film
    Preparating process of As2S3 ridge waveguide
    Surface of As2S3 film developed with and without bottom film
    Photoprotective layer parameters
    Waveguide profile under different parameters
    As2S3 ridge waveguide topography diagram
    TE mode field distribution under the structural parameters of As2S3 ridge waveguide which was prepared
    Insertion loss of different lengths(at 1 550 nm guide mode)
    • Table 1. Dependece of the thickness of bottom film(photoprotective layer)on the exposure dose and development time

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      Table 1. Dependece of the thickness of bottom film(photoprotective layer)on the exposure dose and development time

      Photoresist thickness/µmExposure dose/(mJ·cm-2Development time/sBottom film thickness/nm
      2.115045~400
      2.120045~220
      2.124045~210
      2.120050~210
      2.120040~300
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    Lei SHANG, Liner ZOU, Xifei YANG, Le LI, Yun SHEN. Preparation of As2S3 Chalcogenide Ridge Waveguide Based on AZ5214 Photoprotective Layer[J]. Acta Photonica Sinica, 2023, 52(10): 1052420

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    Paper Information

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    Received: May. 12, 2023

    Accepted: Aug. 15, 2023

    Published Online: Dec. 5, 2023

    The Author Email: ZOU Liner (linerzou@ncu.edu.cn)

    DOI:10.3788/gzxb20235210.1052420

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